Samsung electronics co., ltd. (20240203702). SUBSTRATE PROCESSING APPARATUS simplified abstract
Contents
SUBSTRATE PROCESSING APPARATUS
Organization Name
Inventor(s)
Yongsu Jang of Cheonan-si (KR)
Seungpil Chung of Cheonan-si (KR)
Jungyoon Yang of Cheonan-si (KR)
Inseong Lim of Cheonan-si (KR)
SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203702 titled 'SUBSTRATE PROCESSING APPARATUS
The abstract of a patent application describes a substrate processing apparatus with a process chamber, a heater to heat the processing space, and a first heat source to heat a different portion of the space. The apparatus also includes protrusions on the heater's surface.
- The substrate processing apparatus includes a process chamber with a heater and a first heat source.
- The heater heats the lower portion of the processing space, while the first heat source heats the upper portion.
- Protrusions on the heater's surface aid in the heating process.
Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Solar cell production
Problems Solved: - Efficient heating of different portions of the processing space - Improved temperature control during substrate processing
Benefits: - Enhanced thermal uniformity - Increased process efficiency - Higher quality end products
Commercial Applications: - Semiconductor industry - Solar panel manufacturing - Electronics production
Questions about the technology: 1. How does the apparatus improve temperature control during substrate processing? 2. What are the key advantages of using protrusions on the heater's surface?
Frequently Updated Research: - Ongoing studies on optimizing thermal management in substrate processing equipment.
Original Abstract Submitted
a substrate processing apparatus includes a process chamber including a processing space, a heater located inside the process chamber and configured to heat a lower portion of the processing space, and a first heat source located inside the process chamber and spaced apart from the heater and configured to heat an upper portion of the processing space, a plurality of first protrusions protruding in a vertical direction from an upper surface of the heater, and a second protrusion protruding in the vertical direction from an edge portion of the upper surface of the heater.
