Samsung electronics co., ltd. (20240203693). PLASMA PROCESSING EQUIPMENT simplified abstract

From WikiPatents
Jump to navigation Jump to search

PLASMA PROCESSING EQUIPMENT

Organization Name

samsung electronics co., ltd.

Inventor(s)

Hee Won Min of Suwon-si (KR)

Song Yun Kang of Suwon-si (KR)

Ju Ho Kim of Suwon-si (KR)

Seok Hwan Bae of Suwon-si (KR)

Dong Yun Yeo of Suwon-si (KR)

Kui Hyun Yoon of Suwon-si (KR)

Seung Bin Lim of Suwon-si (KR)

Ji Yun Ju of Suwon-si (KR)

Seo Yeon Choi of Suwon-si (KR)

PLASMA PROCESSING EQUIPMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240203693 titled 'PLASMA PROCESSING EQUIPMENT

The abstract describes a plasma processing equipment that includes an electrostatic chuck, a gas filling unit, a gas supply unit, and a focus ring.

  • The equipment has an electrostatic chuck where a substrate is placed.
  • A gas filling unit is provided between the substrate and the electrostatic chuck.
  • The gas supply unit extends through the electrostatic chuck and is connected to the gas filling unit, comprising nonconductive balls.
  • A focus ring is provided along an edge of the electrostatic chuck.

Potential Applications: - Semiconductor manufacturing - Thin film deposition - Surface modification processes

Problems Solved: - Enhanced substrate stability during plasma processing - Improved gas distribution for uniform processing

Benefits: - Increased processing efficiency - Higher quality and consistency of processed substrates - Reduced maintenance requirements

Commercial Applications: Plasma processing equipment with improved gas distribution and substrate stability can be used in industries such as semiconductor manufacturing, electronics production, and research laboratories.

Questions about Plasma Processing Equipment: 1. How does the gas filling unit contribute to the overall performance of the equipment? 2. What are the advantages of using nonconductive balls in the gas supply unit?


Original Abstract Submitted

a plasma processing equipment includes: an electrostatic chuck on which a substrate is provided; a gas filling unit provided between the substrate and the electrostatic chuck; a gas supply unit extending through the electrostatic chuck and connected to the gas filling unit, the gas supply unit comprising a plurality of first nonconductive balls; and a focus ring provided along an edge of the electrostatic chuck.