Samsung electronics co., ltd. (20240203475). SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Commercial Applications
- 1.9 Prior Art
- 1.10 Frequently Updated Research
- 1.11 Questions about Semiconductor Memory Device
- 1.12 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203475 titled 'SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor memory device described in the patent application includes a memory cell array, a row hammer management circuit, and a refresh control circuit. The row hammer management circuit keeps track of the number of times each memory cell row is accessed, identifies heavily accessed rows, and performs necessary operations. The refresh control circuit handles refreshing operations on neighboring memory cell rows to prevent data corruption.
- The row hammer management circuit monitors access counts for memory cell rows.
- It identifies heavily accessed rows and performs internal read-update-write operations.
- The refresh control circuit handles refreshing operations on adjacent memory cell rows to prevent data corruption.
Potential Applications
This technology can be applied in various semiconductor memory devices, such as RAM modules, to enhance data integrity and performance. It can also be useful in systems where frequent memory access occurs.
Problems Solved
This technology addresses the issue of data corruption caused by frequent access to specific memory cell rows, known as the row hammer effect. By identifying and managing heavily accessed rows, it helps prevent data loss and maintain system stability.
Benefits
- Improved data integrity in semiconductor memory devices - Enhanced performance by efficiently managing memory access - Prevention of data corruption and system instability
Commercial Applications
This technology can be valuable in the production of high-performance computing systems, servers, and other devices that rely on semiconductor memory. It can also be beneficial for data centers and cloud computing facilities where memory reliability is crucial.
Prior Art
Readers interested in exploring prior art related to this technology can start by researching memory management techniques in semiconductor devices, particularly focusing on row hammer mitigation strategies.
Frequently Updated Research
Researchers are continually exploring new methods to address the row hammer effect in semiconductor memory devices. Stay updated on the latest advancements in memory management and data integrity technologies.
Questions about Semiconductor Memory Device
How does the row hammer management circuit prevent data corruption?
The row hammer management circuit identifies heavily accessed memory cell rows and performs internal read-update-write operations to mitigate the risk of data corruption.
What are the potential consequences of not addressing the row hammer effect in semiconductor memory devices?
Failure to address the row hammer effect can lead to data corruption, system instability, and potential data loss in semiconductor memory devices.
Original Abstract Submitted
a semiconductor memory device includes a memory cell array including a plurality of memory cell rows, a row hammer management circuit and a refresh control circuit. the row hammer management circuit counts the number of times of access associated with each of the plurality of memory cell rows in response to an active command from an external memory controller to store the counted values in each of the plurality of memory cell rows as count data, determines a hammer address associated with at least one of the plurality of memory cell rows, which is intensively accessed more than a predetermined reference number of times, based on the counted values, and performs an internal read-update-write operation. the refresh control circuit receives the hammer address and to perform a hammer refresh operation on victim memory cell rows which are physically adjacent to a memory cell row corresponding to the hammer address.
