Samsung electronics co., ltd. (20240201868). SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Commercial Applications
- 1.9 Prior Art
- 1.10 Frequently Updated Research
- 1.11 Questions about Semiconductor Memory Device
- 1.12 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Sunghye Cho of Hwaseong-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240201868 titled 'SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor memory device described in the patent application includes a memory cell array and a cyclic redundancy check (CRC) engine. The memory cell array consists of volatile memory cells connected to word-lines and bit-lines. The CRC engine detects errors in main data and system parity data provided by a memory controller through a link, determines the type of error, and transmits an error flag back to the memory controller.
- The semiconductor memory device has a memory cell array with volatile memory cells.
- A CRC engine is used to detect errors in data and system parity data.
- Errors are classified as either link-related or memory cell-related.
- The error flag is sent back to the memory controller for further action.
Potential Applications
This technology can be applied in various memory systems where error detection and correction are crucial, such as in data storage devices, communication systems, and computing systems.
Problems Solved
This technology addresses the need for efficient error detection and classification in semiconductor memory devices, ensuring data integrity and reliability in memory operations.
Benefits
- Improved data reliability and integrity - Enhanced error detection and correction capabilities - Increased overall system performance and efficiency
Commercial Applications
The technology can be utilized in the development of high-performance memory modules for servers, data centers, and other computing systems where data integrity is paramount. It can also be integrated into communication systems to ensure reliable data transmission.
Prior Art
Prior research in the field of error detection and correction in memory devices can be found in academic journals, patent databases, and technical conferences related to semiconductor memory technologies.
Frequently Updated Research
Researchers are constantly exploring new methods and algorithms for error detection and correction in memory systems to enhance data reliability and system performance.
Questions about Semiconductor Memory Device
How does the CRC engine classify errors in the memory system?
The CRC engine classifies errors based on whether they are related to the link or the volatile memory cells, providing valuable information for error correction.
What are the potential implications of using this technology in data storage devices?
By implementing this technology in data storage devices, data integrity and reliability can be significantly improved, leading to enhanced overall system performance.
Original Abstract Submitted
a semiconductor memory device includes a memory cell array and a cyclic redundancy check (crc) engine. the memory cell array includes a plurality of volatile memory cells coupled to respective ones of a plurality of word-lines and respective ones of a plurality of bit-lines. the crc engine, during a memory operation on the memory cell array, detects an error in a main data and a system parity data provided from a memory controller external to the semiconductor memory device through a link, generates an error flag indicating whether the detected error corresponds to either a first type of error associated with the link or a second type of error associated with the volatile memory cells based on the system parity data and transmit the error flag to the memory controller.
