Samsung electronics co., ltd. (20240201578). OPTICAL PROXIMITY CORRECTION (OPC) METHOD AND METHOD OF MANUFACTURING MASK BY USING THE SAME simplified abstract
Contents
- 1 OPTICAL PROXIMITY CORRECTION (OPC) METHOD AND METHOD OF MANUFACTURING MASK BY USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 OPTICAL PROXIMITY CORRECTION (OPC) METHOD AND METHOD OF MANUFACTURING MASK BY USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Optical Proximity Correction
- 1.13 Original Abstract Submitted
OPTICAL PROXIMITY CORRECTION (OPC) METHOD AND METHOD OF MANUFACTURING MASK BY USING THE SAME
Organization Name
Inventor(s)
Myoungho Kang of SUWON-SI (KR)
OPTICAL PROXIMITY CORRECTION (OPC) METHOD AND METHOD OF MANUFACTURING MASK BY USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240201578 titled 'OPTICAL PROXIMITY CORRECTION (OPC) METHOD AND METHOD OF MANUFACTURING MASK BY USING THE SAME
Simplified Explanation
This patent application describes a method for optical proximity correction (OPC) in semiconductor manufacturing. It involves creating a mask layout for target patterns on a wafer, dividing the edges of the layout into fragments, rotating the layout at a specific angle, extracting the contour of the target pattern using an OPC model, calculating edge placement errors, and adjusting the fragments accordingly.
- Generating a mask layout for target patterns on a wafer
- Dividing edges of the mask layout into fragments
- Rotating the mask layout at a predetermined angle
- Extracting the contour of the target pattern using an OPC model
- Calculating edge placement errors for each fragment
- Adjusting the fragments based on the calculated displacements
Key Features and Innovation
- Advanced method for optical proximity correction in semiconductor manufacturing
- Utilizes rotation of mask layout to improve accuracy in pattern extraction
- Efficiently calculates edge placement errors and adjusts fragments for better pattern alignment
Potential Applications
- Semiconductor manufacturing
- Integrated circuit design
- Nanotechnology
Problems Solved
- Improves accuracy in pattern extraction
- Enhances edge placement precision
- Optimizes mask layout design for semiconductor manufacturing processes
Benefits
- Higher accuracy in semiconductor manufacturing
- Improved edge placement precision
- Enhanced efficiency in mask layout design
Commercial Applications
Optimizing mask layout design for semiconductor manufacturing processes to improve accuracy and efficiency in pattern extraction.
Prior Art
Readers can explore prior research on optical proximity correction methods in semiconductor manufacturing to understand the evolution of this technology.
Frequently Updated Research
Stay informed about the latest advancements in optical proximity correction methods in semiconductor manufacturing to enhance your understanding of this field.
Questions about Optical Proximity Correction
How does optical proximity correction impact semiconductor manufacturing processes?
Optical proximity correction plays a crucial role in improving the accuracy and efficiency of semiconductor manufacturing processes by optimizing mask layout designs for better pattern extraction.
What are the key challenges in implementing optical proximity correction in semiconductor manufacturing?
The key challenges in implementing optical proximity correction include accurately calculating edge placement errors, adjusting fragments effectively, and ensuring overall pattern alignment in the manufacturing process.
Original Abstract Submitted
an optical proximity correction (opc) method includes generating a mask layout for target patterns on a wafer, dividing edges of the mask layout into fragments, generating a rotated mask layout by rotating the mask layout at a predetermined angle, extracting a contour of a target pattern by inputting data on the fragments of the rotated mask layout to an opc model, calculating an edge placement error (epe) for each fragment, determining whether to re-perform the extracting of the contour of the target pattern, calculating displacements of the fragments when it is determined that the extracting of the contour of the target pattern is re-performed, and moving the fragments by the displacements.
