Samsung electronics co., ltd. (20240196624). METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY simplified abstract
Contents
- 1 METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Ferroelectric-based 3-Dimensional Flash Memory
- 1.13 Original Abstract Submitted
METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY
Organization Name
Inventor(s)
Yunheub Song of SUWON-SI, GYEONGGI-DO (KR)
CHANGHWAN Choi of SUWON-SI, GYEONGGI-DO (KR)
JAEMIN Sim of SUWON-SI, GYEONGGI-DO (KR)
METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240196624 titled 'METHOD OF MANUFACTURING FERROELECTRIC-BASED 3-DIMENSIONAL FLASH MEMORY
Simplified Explanation
This patent application discloses a method for manufacturing a 3-dimensional flash memory based on ferroelectric materials, as well as a flash memory design that enhances ferroelectric polarization properties.
Key Features and Innovation
- Method for manufacturing a ferroelectric-based 3-dimensional flash memory.
- Improvement of ferroelectric polarization properties in the flash memory.
- Innovative design to enhance memory performance.
Potential Applications
The technology can be used in various electronic devices requiring non-volatile memory, such as smartphones, tablets, and digital cameras.
Problems Solved
Enhances ferroelectric polarization properties in flash memory. Improves memory performance and reliability. Enables the development of more efficient and durable memory solutions.
Benefits
Enhanced memory performance. Improved reliability and durability. Increased efficiency in memory storage.
Commercial Applications
The technology can be applied in the consumer electronics industry for the development of high-performance memory solutions, potentially leading to faster and more reliable devices.
Prior Art
Readers can explore prior research on ferroelectric materials in memory devices to understand the evolution of this technology.
Frequently Updated Research
Stay updated on advancements in ferroelectric materials research for memory applications to further enhance memory performance and reliability.
Questions about Ferroelectric-based 3-Dimensional Flash Memory
What are the key advantages of using ferroelectric materials in flash memory technology?
Ferroelectric materials offer fast switching speeds, low power consumption, and high data retention capabilities, making them ideal for memory applications.
How does the 3-dimensional design of the flash memory improve performance compared to traditional 2-dimensional designs?
The 3-dimensional architecture allows for higher memory density and faster read/write speeds, enhancing overall memory performance.
Original Abstract Submitted
a method of manufacturing a ferroelectric-based 3-dimensional flash memory is disclosed. also, a 3-dimensional flash memory that improves ferroelectric polarization properties and a method of manufacturing the same are disclosed.
