Samsung electronics co., ltd. (20240196623). ELECTRONIC DEVICE INCLUDING FERROELECTRIC THIN FILM, METHOD OF MANUFACTURING THE ELECTRONIC DEVICE, AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract
ELECTRONIC DEVICE INCLUDING FERROELECTRIC THIN FILM, METHOD OF MANUFACTURING THE ELECTRONIC DEVICE, AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE
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ELECTRONIC DEVICE INCLUDING FERROELECTRIC THIN FILM, METHOD OF MANUFACTURING THE ELECTRONIC DEVICE, AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240196623 titled 'ELECTRONIC DEVICE INCLUDING FERROELECTRIC THIN FILM, METHOD OF MANUFACTURING THE ELECTRONIC DEVICE, AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE
The abstract of the patent application describes an electronic device with a conductive material layer, a ferroelectric layer made of a compound represented by HfAO, and an electrode covering the ferroelectric layer.
- The electronic device includes a conductive material layer.
- The ferroelectric layer is made of a compound represented by HfAO.
- The electrode covers the ferroelectric layer.
- The compound in the ferroelectric layer has specific parameters: 0 ≤ x ≤ 1, 0 ≤ y ≤ 1, and 2(x+y) < z.
Potential Applications: This technology could be used in electronic devices such as memory storage, sensors, or actuators.
Problems Solved: This innovation addresses the need for improved performance and efficiency in electronic devices.
Benefits: The use of the ferroelectric layer with the specific compound can enhance the functionality and reliability of electronic devices.
Commercial Applications: This technology could have applications in the semiconductor industry for the development of advanced electronic devices.
Prior Art: Researchers can explore prior studies on ferroelectric materials and their applications in electronic devices to understand the background of this technology.
Frequently Updated Research: Stay informed about the latest advancements in ferroelectric materials research for potential improvements in electronic device technology.
Questions about Ferroelectric Layer with HfAO: 1. How does the specific compound HfAO enhance the performance of electronic devices? 2. What are the potential challenges in implementing this technology in commercial electronic devices?
Original Abstract Submitted
an electronic device may include a conductive material layer, a ferroelectric layer covering the conductive material layer, and an electrode covering the ferroelectric layer. the ferroelectric layer may include a compound represented by hfao, where 0≤x≤1, 0≤y≤1, and 2(x+y)<z.
