Samsung electronics co., ltd. (20240196622). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
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SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
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SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240196622 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
The semiconductor device described in the abstract consists of a substrate with an active region that includes a central active region and extended active regions branching out from it, all defined by a device isolation layer. Additionally, there are gate structures on the active region that form pass transistors, sharing a drain region on the central active region, giving the active region an H shape in plan view.
- Key Features and Innovation:
- Active region with central and extended active regions - Gate structures forming pass transistors - Shared drain region on the central active region - H-shaped active region in plan view
- Potential Applications:
- Integrated circuits - Semiconductor devices - Electronics manufacturing
- Problems Solved:
- Efficient use of space on the substrate - Improved transistor performance - Enhanced functionality in semiconductor devices
- Benefits:
- Higher integration density - Better transistor operation - Increased functionality in electronic devices
- Commercial Applications:
- This technology could be utilized in the production of advanced electronic devices such as smartphones, tablets, and computers, enhancing their performance and functionality.
- Prior Art:
- Further research may be needed to identify specific prior art related to this technology.
- Frequently Updated Research:
- Stay updated on advancements in semiconductor device technology and manufacturing processes to enhance the efficiency and performance of electronic devices.
Questions about semiconductor device technology:
1. How does the shared drain region on the central active region benefit the overall performance of the semiconductor device? 2. What are the potential challenges in implementing this H-shaped active region design in semiconductor manufacturing processes?
Original Abstract Submitted
a semiconductor device includes a substrate including an active region including a central active region extending in a first direction and first to fourth extended active regions extending from an edge of the central active region in a second direction perpendicular to the first direction, and a device isolation layer defining the active region; and first to fourth gate structures on the active region and spaced apart from one another, wherein the central active region, the first to fourth extended active regions, and the first to fourth gate structures constitute first to fourth pass transistors, the first to fourth pass transistors share one drain region on the central active region, and the active region has an h shape in a plan view.
