Samsung electronics co., ltd. (20240196618). INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Dongsung Choi of Suwon-si (KR)
Changheon Cheon of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240196618 titled 'INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
The patent application describes an integrated circuit device with a unique channel structure that includes multiple layers for improved performance.
- The device includes a semiconductor substrate with conductive lines overlapping in a vertical direction and separated by insulating layers.
- The channel structure consists of a core insulating layer, a channel layer, a gate insulating layer, and a ferroelectric layer.
- The channel structure passes through the conductive lines and insulating layers, enhancing the device's functionality.
Potential Applications:
- This technology can be used in various electronic devices requiring high-performance integrated circuits.
- It may find applications in memory devices, processors, and other semiconductor components.
Problems Solved:
- The innovative channel structure addresses the need for improved performance and efficiency in integrated circuits.
- It offers a solution to the challenges of miniaturization and increasing complexity in semiconductor devices.
Benefits:
- Enhanced performance and efficiency in integrated circuits.
- Improved reliability and functionality in electronic devices.
Commercial Applications:
- This technology has significant commercial potential in the semiconductor industry, particularly in the development of advanced electronic devices.
Questions about the technology: 1. How does the unique channel structure improve the performance of integrated circuits? 2. What are the potential limitations or challenges associated with implementing this technology in commercial devices?
Original Abstract Submitted
an integrated circuit device includes a semiconductor substrate; a plurality of conductive lines extending on the semiconductor substrate in a horizontal direction and overlapping each other in a vertical direction; a plurality of insulating layers between pairs of conductive lines of the plurality of conductive lines and extending in the horizontal direction; and a channel structure passing through the plurality of conductive lines and the plurality of insulating layers, wherein the channel structure includes a core insulating layer, a channel layer on a side wall and a bottom surface of the core insulating layer, a gate insulating layer on an outer wall of the channel layer, and a ferroelectric layer on an outer wall of the gate insulating layer.
