Samsung electronics co., ltd. (20240194786). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Semiconductor Device Innovation
- 1.13 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Dong Suk Shin of Suwon-si (KR)
Jung Taek Kim of Suwon-si (KR)
Seok Hoon Kim of Suwon-si (KR)
Seo Jin Jeong of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194786 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a unique gate structure design to enhance performance and reliability. The gate structures are made of silicon-germanium and feature a protruding upper portion for improved functionality.
- The semiconductor device has an active pattern and multiple gate structures with gate electrodes and gate spacers.
- Each gate structure includes a semiconductor liner layer and a semiconductor filling layer made of silicon-germanium.
- The semiconductor filling layer has an upper portion that extends beyond the active pattern, enhancing the device's performance.
- The inner surface of the semiconductor liner layer has a concave region, adding to the innovative design of the gate structure.
Key Features and Innovation
- Gate structures made of silicon-germanium for improved performance and reliability.
- Protruding upper portion of the semiconductor filling layer for enhanced functionality.
- Concave region on the inner surface of the semiconductor liner layer for added innovation.
Potential Applications
The semiconductor device can be used in various electronic applications requiring high performance and reliability, such as mobile devices, computers, and communication systems.
Problems Solved
The technology addresses the need for improved performance and reliability in semiconductor devices, offering a unique gate structure design to enhance functionality.
Benefits
- Improved performance and reliability in electronic devices.
- Enhanced functionality with the protruding upper portion of the semiconductor filling layer.
- Innovative design with the concave region on the inner surface of the semiconductor liner layer.
Commercial Applications
Title: Enhanced Semiconductor Device for High-Performance Electronics The technology can be commercially applied in the manufacturing of mobile devices, computers, and communication systems to improve overall performance and reliability, meeting the demands of modern electronic applications.
Prior Art
Further research can be conducted in the field of semiconductor device design and materials to explore similar innovations and advancements in gate structure technology.
Frequently Updated Research
Stay updated on the latest developments in semiconductor device design and materials to incorporate new findings and technologies into future innovations.
Questions about Semiconductor Device Innovation
What are the key benefits of using silicon-germanium in the gate structures of the semiconductor device?
Using silicon-germanium in the gate structures enhances performance and reliability, offering improved functionality and durability compared to traditional materials.
How does the protruding upper portion of the semiconductor filling layer contribute to the overall performance of the device?
The protruding upper portion of the semiconductor filling layer extends beyond the active pattern, providing additional functionality and enhancing the device's capabilities.
Original Abstract Submitted
there is provided a semiconductor device capable of improving performance and reliability of an element. the semiconductor device includes an active pattern extending in a first direction, and a plurality of gate structures spaced apart from each other in the first direction on the active pattern. each gate structure comprises a gate electrode extending in a second direction and a gate spacer on a sidewall of the gate electrode and a source/drain pattern disposed between adjacent gate structures. the gate structure comprises a semiconductor liner layer and a semiconductor filling layer on the semiconductor liner layer, wherein the semiconductor liner layer and the semiconductor filling layer are formed of silicon-germanium. the semiconductor filling layer comprises an upper portion protruding in a third direction beyond an upper surface of the active pattern. a maximum width of the upper portion of the semiconductor filling layer in the first direction is greater than a width of the semiconductor filling layer in the first direction on the upper surface of the active pattern. the semiconductor liner layer comprises an outer surface in contact with the active pattern and an inner surface facing the semiconductor filling layer. in a plan view, the inner surface of the semiconductor liner layer comprises a concave region.
