Samsung electronics co., ltd. (20240194768). INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
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INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
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INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194768 titled 'INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
The abstract describes a method of manufacturing an integrated circuit device involving the formation of various layers and structures on a substrate to create a complex wiring system.
- Formation of a preliminary channel stack with sacrificial layers and channel layers on a substrate.
- Creation of a buried trench by removing a portion of the preliminary channel stack and substrate.
- Formation of a sacrificial buried layer in the buried trench.
- Creation of a source/drain region on a fin-type active region.
- Addition of a power via on the sacrificial buried layer connected to the source/drain region.
- Formation of a backside buried wiring layer in the buried trench connected to the power via.
- Establishment of a backside wiring structure connected to the backside buried wiring layer.
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry
Problems Solved: - Efficient and precise formation of complex wiring structures - Enhanced connectivity and performance of integrated circuit devices
Benefits: - Improved functionality of integrated circuits - Higher efficiency in manufacturing processes - Enhanced electrical connectivity
Commercial Applications: Title: "Advanced Integrated Circuit Manufacturing for Enhanced Performance" This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and IoT devices, improving their speed and reliability.
Prior Art: Readers can explore prior art related to this technology in semiconductor manufacturing processes, integrated circuit design, and advanced wiring techniques.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor manufacturing, integrated circuit design, and wiring technologies to enhance the performance and efficiency of electronic devices.
Questions about Integrated Circuit Manufacturing: 1. How does this method improve the performance of integrated circuit devices? 2. What are the key advantages of using a buried wiring layer in semiconductor manufacturing processes?
Original Abstract Submitted
a method of manufacturing an integrated circuit device includes forming a preliminary channel stack, which includes sacrificial layers and channel layers, on a substrate, forming a preliminary channel pattern and a fin-type active region by removing a portion of the preliminary channel stack and a portion of the substrate to define a buried trench, forming a sacrificial buried layer in the buried trench, forming a source/drain region on the fin-type active region, forming, on the sacrificial buried layer, a power via electrically connected to the source/drain region, removing a portion of the substrate to expose a bottom surface of the sacrificial buried layer, removing the sacrificial buried layer and forming, in the buried trench, a backside buried wiring layer connected to the power via, and forming a backside wiring structure electrically connected to the backside buried wiring layer.
