Samsung electronics co., ltd. (20240194752). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Woo Kyung You of Suwon-si (KR)
Sang Koo Kang of Suwon-si (KR)
Koung Min Ryu of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194752 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application includes a substrate, an active pattern on the substrate, gate electrodes covering the active pattern, gate spacers on the sidewalls of the gate electrodes, source/drain patterns between the gate electrodes, an etch stop film along the sidewalls of the gate spacer and source/drain pattern, an interlayer insulating film with a contact trench exposing the source/drain pattern, a liner film on the outer sidewall of the contact trench, and a source/drain contact filling the contact trench.
- Gate electrodes covering the active pattern and extending in a second direction
- Gate spacers on the sidewalls of the gate electrodes
- Source/drain patterns between the gate electrodes
- Etch stop film along the sidewalls of the gate spacer and source/drain pattern
- Interlayer insulating film with a contact trench exposing the source/drain pattern
- Liner film on the outer sidewall of the contact trench
- Source/drain contact filling the contact trench
Potential Applications: - Semiconductor manufacturing - Integrated circuits - Electronic devices
Problems Solved: - Enhancing the performance of semiconductor devices - Improving the efficiency of source/drain contacts
Benefits: - Increased device performance - Enhanced reliability - Improved manufacturing processes
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be applied in the production of high-performance electronic devices, leading to improved functionality and reliability. The market implications include increased demand for advanced semiconductor components in various industries such as telecommunications, consumer electronics, and automotive.
Prior Art: Readers can explore prior research in semiconductor device manufacturing, gate electrode technology, and source/drain contact improvements to gain a deeper understanding of the advancements in this patent application.
Frequently Updated Research: Researchers are continually exploring new materials and techniques to further enhance the performance and efficiency of semiconductor devices. Stay updated on the latest developments in semiconductor technology to leverage cutting-edge innovations in your projects.
Questions about Semiconductor Device Technology: 1. How does this semiconductor device technology improve the performance of electronic devices? 2. What are the key features of the gate electrodes and source/drain patterns in this innovation?
Original Abstract Submitted
a semiconductor device includes a substrate, an active pattern disposed on the substrate and extending in a first direction, gate electrodes covering the active pattern and extending in a second direction, a gate spacer disposed on a sidewall of each of the gate electrodes, a source/drain pattern disposed between adjacent ones of the gate electrodes, an etch stop film disposed along a sidewall of the gate spacer and a profile of the source/drain pattern, an interlayer insulating film disposed between the adjacent ones of the gate electrodes with a contact trench exposing the source/drain pattern defined therein, a liner film disposed on an outer sidewall of the contact trench, and a source/drain contact disposed on the liner film and filling the contact trench, in which the source/drain contact is connected to the source/drain pattern. at least a portion of the liner film may be disposed in the source/drain pattern.
