Samsung electronics co., ltd. (20240194704). IMAGE SENSOR simplified abstract
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
Seung Joon Lee of Suwon-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194704 titled 'IMAGE SENSOR
The patent application describes an image sensor with pixels containing a photoelectric conversion area and a transfer gate electrode on a substrate with impurities of different conductivity types.
- Substrate with impurities of a first conductivity type
- Pixels with photoelectric conversion areas containing impurities of a second conductivity type
- Transfer gate electrode with extensions of different depths overlapping the photoelectric conversion area
- First extension bottom surface in the photoelectric conversion area
- Second and third extension bottom surfaces spaced apart from the photoelectric conversion area
Potential Applications: - Digital cameras - Surveillance systems - Medical imaging devices
Problems Solved: - Improved image sensor performance - Enhanced image quality - Reduced noise in image capture
Benefits: - Higher resolution images - Better low-light performance - Increased sensitivity to light
Commercial Applications: Title: "Advanced Image Sensor Technology for Enhanced Imaging Devices" This technology can be used in the development of high-quality digital cameras, surveillance systems, and medical imaging devices, offering superior image quality and performance in various commercial applications.
Questions about Image Sensor Technology: 1. How does the transfer gate electrode improve the performance of the image sensor? 2. What are the potential challenges in implementing this technology in commercial imaging devices?
Frequently Updated Research: Stay updated on the latest advancements in image sensor technology to ensure optimal performance and compatibility with evolving imaging devices.
Original Abstract Submitted
an image sensor includes a substrate including first and second surfaces opposite to each other in a first direction; pixels each including a photoelectric conversion area in the substrate; and a transfer gate electrode overlapping the photoelectric conversion area of one pixel of the plurality of pixels in the first direction. the substrate contains impurities of a first conductivity type. the photoelectric conversion area contains impurities of a different second conductivity type. the transfer gate electrode includes first, second and third extensions extending from the first surface into the substrate and having respective a first, second, and third depths. the first depth is larger than each of the second and third depths. a bottom surface of the first extension is in the photoelectric conversion area. each of the bottom surfaces of the second and third extensions is spaced apart from the photoelectric conversion area in the first direction.
