Samsung electronics co., ltd. (20240194553). SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Potential Applications
- 1.5 Problems Solved
- 1.6 Benefits
- 1.7 Commercial Applications
- 1.8 Prior Art
- 1.9 Frequently Updated Research
- 1.10 Questions about Semiconductor Package Innovation
- 1.11 Original Abstract Submitted
SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194553 titled 'SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME
The semiconductor package described in the patent application consists of a first chip with a first substrate, a first wiring layer, and through-electrodes protruding from the lower surface of the substrate. The package also includes a double gap-fill layer with a double-layer structure covering the side and lower surfaces of the first chip, as well as a protruding portion of the through-electrodes. A second chip is placed on top of the first chip and the double gap-fill layer, bonded using hybrid bonding. Additionally, a bump on the lower surface of the first chip is connected to the through-electrode.
- The semiconductor package includes a first chip with through-electrodes protruding from the lower surface.
- A double gap-fill layer with a double-layer structure covers the side and lower surfaces of the first chip.
- A second chip is bonded to the first chip using hybrid bonding.
- A bump on the lower surface of the first chip is connected to the through-electrode.
Potential Applications
The technology described in the patent application could be used in various electronic devices such as smartphones, tablets, and computers. It could also be applied in automotive electronics and industrial equipment.
Problems Solved
This technology addresses the need for efficient and reliable bonding between chips in semiconductor packages. It also helps in improving the overall performance and durability of electronic devices.
Benefits
The semiconductor package offers improved connectivity, thermal management, and overall functionality of electronic devices. It enhances the reliability and longevity of the devices by providing secure bonding between chips.
Commercial Applications
The technology could be utilized in the manufacturing of consumer electronics, automotive electronics, and industrial equipment. It could potentially lead to more advanced and reliable electronic devices in the market.
Prior Art
Prior research in semiconductor packaging and hybrid bonding techniques could provide valuable insights into the development of this technology. Researchers and industry experts in the field of semiconductor packaging may have relevant information on similar innovations.
Frequently Updated Research
Ongoing research in semiconductor packaging, hybrid bonding, and advanced materials could influence the further development and applications of this technology. Stay updated on the latest advancements in the field to understand the potential impact of this innovation.
Questions about Semiconductor Package Innovation
What are the key advantages of using hybrid bonding in semiconductor packaging?
Hybrid bonding offers superior electrical and thermal conductivity, improved mechanical strength, and reduced interconnect resistance compared to traditional bonding methods.
How does the double gap-fill layer contribute to the performance of the semiconductor package?
The double gap-fill layer provides enhanced protection and insulation for the chips, ensuring reliable operation and longevity of the electronic devices.
Original Abstract Submitted
a semiconductor package includes a first chip including a first substrate, a first wiring layer on the first substrate, and a plurality of through-electrodes to be connected to the first wiring layer and protruding from a lower surface of the first substrate, a double gap-fill layer covering a side surface and a lower surface of the first chip and a protruding portion of the through-electrode and having a double layer structure, a second chip disposed on the first chip and the double gap-fill layer, including a second wiring layer and a second substrate on the second wiring layer, and bonded to the first chip by hybrid bonding, and a bump on a lower surface of the first chip and connected to the through-electrode.
