Samsung electronics co., ltd. (20240194243). NONVOLATILE MEMORY DEVICES simplified abstract
Contents
NONVOLATILE MEMORY DEVICES
Organization Name
Inventor(s)
Hee-Woong Kang of Suwon-si (KR)
Dong-Hun Kwak of Suwon-si (KR)
NONVOLATILE MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194243 titled 'NONVOLATILE MEMORY DEVICES
The patent application describes a nonvolatile memory device with a memory cell array and a row decoder. The memory cell array consists of multiple mats, each containing cell strings connected to word-lines, bit-lines, and string selection lines. The row decoder applies different voltages to word-lines for single mat and multi-mat modes.
- Memory device with multiple mats in the memory cell array
- Cell strings connected to word-lines, bit-lines, and string selection lines
- Row decoder applies different voltages to word-lines for different modes
Potential Applications: - Data storage devices - Embedded systems - Consumer electronics
Problems Solved: - Efficient memory access in different modes - Enhanced data storage capabilities
Benefits: - Improved memory performance - Increased data storage efficiency
Commercial Applications: Title: "Advanced Nonvolatile Memory Devices for Enhanced Data Storage" This technology can be used in: - Solid-state drives - Smartphones and tablets - IoT devices
Prior Art: Research on nonvolatile memory devices and row decoder technologies can provide insights into similar innovations.
Frequently Updated Research: Ongoing studies on memory cell array optimization and row decoder efficiency can impact the development of this technology.
Questions about Nonvolatile Memory Devices: 1. How does the row decoder enhance memory access in different modes? 2. What are the potential applications of this advanced memory technology?
1. How does the row decoder enhance memory access in different modes? The row decoder in the nonvolatile memory device applies different voltages to word-lines for single mat and multi-mat modes, allowing for efficient memory access based on the operational requirements.
2. What are the potential applications of this advanced memory technology? This technology can be utilized in data storage devices, embedded systems, and consumer electronics to improve memory performance and data storage efficiency.
Original Abstract Submitted
a nonvolatile memory device includes a memory cell array and a row decoder. the memory cell array includes a plurality of mats. a first cell string of first mat is connected to a plurality of first word-lines, a first bit-line and a first string selection line. a second cell string of second mat is connected to a plurality of second word-lines, a second bit-line and a second string selection line. each of the first and second cell strings includes a ground selection transistor, memory cells, and a string selection transistor coupled in series. the row decoder applies a first voltage to a third word-line among the plurality of first and second word-lines for a first period of time in a single mat mode and to apply a second voltage to the third word-line for a second period of time longer than the first period of time in a multi-mat mode.
