Samsung electronics co., ltd. (20240191389). METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING WAFER USING THE SAME simplified abstract
Contents
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING WAFER USING THE SAME
Organization Name
Inventor(s)
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING WAFER USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240191389 titled 'METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING WAFER USING THE SAME
The method of manufacturing a silicon single crystal involves growing the crystal by co-doping boron and phosphorus into the silicon melt, with specific concentration ratios and ranges for the dopants.
- Co-doping boron and phosphorus into the silicon melt
- Controlling the doping concentration ratio of phosphorus to boron
- Maintaining the initial concentration of boron within a specific range
Potential Applications: - Semiconductor industry for electronic devices - Solar panel manufacturing - Optoelectronics for light-emitting diodes (LEDs)
Problems Solved: - Enhancing the quality and efficiency of silicon single crystal growth - Improving the performance of semiconductor devices
Benefits: - Increased yield of high-quality silicon single crystals - Enhanced electrical properties of the resulting semiconductor materials
Commercial Applications: Title: Advanced Silicon Single Crystal Growth Method for Semiconductor Industry Description: This technology can be utilized in the production of high-performance electronic devices, solar panels, and optoelectronic components, leading to improved product quality and efficiency in the semiconductor industry.
Questions about Silicon Single Crystal Growth: 1. How does co-doping boron and phosphorus affect the properties of the silicon single crystal? 2. What are the specific advantages of controlling the doping concentration ratio in the growth process?
Original Abstract Submitted
a method of manufacturing a silicon single crystal includes preparing a silicon melt and growing the silicon single crystal based on co-doping boron and phosphorus into the silicon melt. the growing of the silicon single crystal includes controlling, a doping concentration ratio, which is a ratio of an initial concentration of phosphorus to an initial concentration of boron, to be a particular ratio and controlling the initial concentration of boron to be within a range of about 8.0e12 atom/cmto about 1.5e13 atom/cm.
