Samsung electronics co., ltd. (20240188294). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Nag Yong Choi of Suwon-si (KR)
Sun Gyung Hwang of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240188294 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes a substrate with a cell array area and an extension area, a mold structure with gate electrodes stacked in a stair shape, mold insulating films, channel structures, and cell contacts. A first interlayer insulating film covers the channel structures and cell contacts.
- Gate electrodes are stacked in a stair shape on the extension area of the substrate.
- Channel structures extend through the mold structure and intersect the gate electrodes.
- Cell contacts are connected to the gate electrodes on the extension area.
- A first interlayer insulating film covers the channel structures and cell contacts.
Potential Applications
This technology could be applied in various semiconductor memory devices, such as flash memory, DRAM, and SRAM.
Problems Solved
This innovation helps in increasing the storage capacity and efficiency of semiconductor memory devices by optimizing the layout of gate electrodes and channel structures.
Benefits
The benefits of this technology include improved performance, higher storage density, and enhanced reliability of semiconductor memory devices.
Potential Commercial Applications
The optimized design of this semiconductor memory device could be utilized in consumer electronics, data storage systems, and computing devices.
Possible Prior Art
One possible prior art could be the use of stacked gate electrodes in semiconductor memory devices to improve performance and storage capacity.
Unanswered Questions
How does this technology compare to existing memory device designs in terms of speed and power consumption?
This article does not provide specific details on the speed and power consumption comparisons with existing memory device designs.
What are the potential challenges in manufacturing this semiconductor memory device at a large scale?
The article does not address the potential challenges in large-scale manufacturing of this semiconductor memory device.
Original Abstract Submitted
a semiconductor memory device comprising a substrate including a cell array area and an extension area, a mold structure including, a plurality of gate electrodes sequentially stacked on the cell array area of the substrate and stacked in a stair shape on the extension area of the substrate, and a plurality of mold insulating films stacked alternately with the plurality of gate electrodes, a plurality of channel structures on the cell array area of the substrate, wherein each of the plurality of channel structures extends through the mold structure and intersects the plurality of gate electrodes, a plurality of cell contacts on the extension area of the substrate and respectively connected to the plurality of gate electrodes, a first interlayer insulating film on the mold structure so as to cover the plurality of channel structures and the plurality of cell contacts.
