Samsung electronics co., ltd. (20240186409). INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR
Organization Name
Inventor(s)
Wooyeol Maeng of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186409 titled 'INTEGRATED CIRCUIT DEVICE INCLUDING A LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR
Simplified Explanation
The patent application describes an integrated circuit device with a unique recess insulating layer design.
- The device includes a semiconductor substrate with first and second conductivity type wells, a source region in the second conductivity type well, and a drain region in the first conductivity type well.
- A recess insulating layer is placed between the source and drain regions, consisting of an upper insulating unit and a lower insulating unit filling respective substrate recesses.
- A gate electrode layer is arranged on the wells, with the recess insulating layer having an asymmetric shape.
Potential Applications
This technology could be applied in the development of advanced integrated circuits for various electronic devices, such as smartphones, tablets, and computers.
Problems Solved
The design of the recess insulating layer helps to improve the performance and efficiency of the integrated circuit device by reducing leakage currents and enhancing overall functionality.
Benefits
The integrated circuit device offers improved insulation between the source and drain regions, leading to enhanced reliability and performance. Additionally, the asymmetric shape of the recess insulating layer contributes to better control of electrical properties.
Potential Commercial Applications
The technology can be utilized in the semiconductor industry for the production of high-performance integrated circuits, targeting consumer electronics and other electronic devices.
Possible Prior Art
One possible prior art could be the use of traditional insulating layers in integrated circuit devices, which may not offer the same level of efficiency and performance as the unique recess insulating layer design described in the patent application.
Unanswered Questions
How does the asymmetric shape of the recess insulating layer impact the overall performance of the integrated circuit device?
The article does not delve into the specific effects of the asymmetric shape on the device's functionality and efficiency.
Are there any potential challenges or limitations associated with implementing this technology in practical applications?
The article does not address any obstacles or constraints that may arise when integrating this technology into real-world electronic devices.
Original Abstract Submitted
an integrated circuit device includes: a semiconductor substrate; first and second conductivity type wells formed in the semiconductor substrate; a source region formed in the second conductivity type well; a drain region formed in the first conductivity type well; a recess insulating layer disposed between the source region and the drain region, and including an upper insulating unit and a lower insulating unit, wherein the upper insulating unit fills an upper substrate recess that extends from an upper surface of the first conductivity type well, and wherein the lower insulating unit fills a lower substrate recess that extends from the upper substrate recess; and a gate electrode layer arranged on the first and second conductivity type wells, and wherein the recess insulating layer has a shape in which both sides thereof are asymmetric with respect to a center of the upper insulating unit.
