Samsung electronics co., ltd. (20240186368). SEMICONDUCTOR DEVICES INCLUDING CAPACITOR AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICES simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES INCLUDING CAPACITOR AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES INCLUDING CAPACITOR AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICES INCLUDING CAPACITOR AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SANGYEOL Kang of Yongin-si (KR)
SEMICONDUCTOR DEVICES INCLUDING CAPACITOR AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186368 titled 'SEMICONDUCTOR DEVICES INCLUDING CAPACITOR AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICES
Simplified Explanation
The abstract describes semiconductor devices with a capacitor that includes a lower electrode, an upper electrode, and a dielectric layer. The lower electrode has a doped region to increase the capacitance of the capacitor.
- Lower electrode with doped region
- Upper electrode on lower electrode
- Dielectric layer between electrodes
- Doped region increases capacitance
Potential Applications
The technology can be applied in various semiconductor devices, such as memory modules, integrated circuits, and power electronics.
Problems Solved
This technology solves the problem of limited capacitance in semiconductor devices, allowing for improved performance and efficiency.
Benefits
The benefits of this technology include increased capacitance, improved device performance, and enhanced efficiency in semiconductor applications.
Potential Commercial Applications
The technology can be utilized in the production of advanced electronic devices, leading to improved functionality and competitiveness in the semiconductor market.
Possible Prior Art
One possible prior art could be the use of different materials or structures to enhance the capacitance of semiconductor devices. Research on similar techniques may have been conducted in the past to improve device performance.
Unanswered Questions
How does the doped region affect the overall performance of the capacitor in the semiconductor device?
The doped region in the lower electrode is designed to increase the capacitance of the capacitor. However, the specific mechanism by which this enhancement occurs is not detailed in the abstract. Further research or experimentation may be needed to fully understand the impact of the doped region on the device performance.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
While the abstract highlights the benefits of the technology, it does not address any potential challenges or limitations that may arise during the implementation of this innovation in semiconductor manufacturing. Factors such as cost, scalability, and compatibility with existing processes could be important considerations that need to be explored further.
Original Abstract Submitted
semiconductor devices including a capacitor and methods of forming the same are provided. the semiconductor devices may include a capacitor that include a lower electrode, an upper electrode on the lower electrode, and a dielectric layer extending between the lower electrode and the upper electrode. the lower electrode may include a doped region that contacts the dielectric layer, and the doped region of the lower electrode is configured to increase a capacitance of the capacitor.
