Samsung electronics co., ltd. (20240186321). SEMICONDUCTOR DEVICE HAVING GATE ISOLATION LAYER simplified abstract
Contents
SEMICONDUCTOR DEVICE HAVING GATE ISOLATION LAYER
Organization Name
Inventor(s)
Seung Seok Ha of Suwon-si (KR)
Hyun Seung Song of Suwon-si (KR)
Kyoung Mi Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE HAVING GATE ISOLATION LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186321 titled 'SEMICONDUCTOR DEVICE HAVING GATE ISOLATION LAYER
Simplified Explanation
The semiconductor device described in the abstract includes active fins, field insulating layers, gate lines, gate isolation layers, and gate spacers. Here are some key points to explain the innovation:
- The device has first and second regions on the substrate, with active fins extending in different directions in each region.
- Field insulating layers separate the active fins and extend in different directions.
- Gate lines are positioned on the field insulating layers and are linearly aligned with them.
- Gate isolation layers separate the field insulating layers from the gate lines.
- Gate spacers are in contact with the sidewalls of the field insulating layers, gate lines, and gate isolation layers.
Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications.
Problems Solved: - This technology helps in improving the performance and efficiency of semiconductor devices by providing better isolation and control over the active components.
Benefits: - Enhanced device performance, improved power efficiency, and better overall functionality of semiconductor devices.
Potential Commercial Applications: - The technology can be utilized in the production of high-performance integrated circuits for use in smartphones, computers, and other electronic devices.
Possible Prior Art: - Previous semiconductor devices may have used similar structures and components, but this innovation appears to offer improvements in design and functionality.
Unanswered Questions: 1. What specific materials are used in the fabrication of the active fins and insulating layers in this semiconductor device? 2. How does the alignment of the gate lines with the field insulating layers contribute to the overall performance of the device?
Original Abstract Submitted
a semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.
