Samsung electronics co., ltd. (20240186183). FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
- 1 FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Hyeonjin Shin of Suwon-si (KR)
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240186183 titled 'FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The field effect transistor described in the patent application includes a source electrode, a drain electrode, channels, gate insulating layers, and a gate electrode. The channels have a hollow closed cross-sectional structure, and the gate insulating layers are located within the channels to insulate the gate electrode from the source and drain electrodes.
- Source electrode, drain electrode, channels, gate insulating layers, and gate electrode are key components of the field effect transistor.
- Channels have a hollow closed cross-sectional structure, providing unique characteristics to the transistor.
- Gate insulating layers are located within the channels to insulate the gate electrode from the source and drain electrodes.
Potential Applications
The technology described in the patent application could be applied in:
- Integrated circuits
- Microprocessors
- Memory devices
Problems Solved
The field effect transistor addresses the following issues:
- Improved performance and efficiency in electronic devices
- Enhanced control over the flow of current
Benefits
The technology offers the following benefits:
- Higher speed and lower power consumption
- Increased reliability and stability in electronic systems
Potential Commercial Applications
The field effect transistor technology could be utilized in various commercial applications, such as:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One example of prior art in the field of field effect transistors is the development of FinFET technology, which introduced a 3D structure to improve transistor performance.
Unanswered Questions
How does the hollow closed cross-sectional structure of the channels impact the transistor's performance?
The article does not delve into the specific effects of the hollow closed cross-sectional structure on the transistor's functionality and efficiency. Further research and analysis may be needed to understand the significance of this design feature.
What materials are used for the gate insulating layers in the transistor?
The patent application does not specify the materials used for the gate insulating layers. Understanding the composition of these layers could provide insights into the overall performance and characteristics of the transistor.
Original Abstract Submitted
disclosed are a field effect transistor and a method of manufacturing the same. the field effect transistor includes a source electrode on a substrate, a drain electrode separated from the source electrode, and channels connected between the source electrode and the drain electrode, gate insulating layers, and a gate electrode. the channels may have a hollow closed cross-sectional structure when viewed in a first cross-section formed by a plane across the source electrode and the drain electrode in a direction perpendicular to the substrate. the gate insulating layers may be in the channels. the gate electrode may be insulated from the source electrode and the drain electrode by the gate insulating layers.
