Samsung electronics co., ltd. (20240184526). MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract

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MEMORY DEVICE AND OPERATING METHOD THEREOF

Organization Name

samsung electronics co., ltd.

Inventor(s)

Seungwoo Seo of Suwon-si (KR)

Sanghoon Cha of Suwon-si (KR)

MEMORY DEVICE AND OPERATING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240184526 titled 'MEMORY DEVICE AND OPERATING METHOD THEREOF

Simplified Explanation

The memory device described in the abstract is a system that includes multiple memory banks divided by different channels, with a processing element that can perform computations using data from these memory banks to generate results.

  • Memory device with multiple memory banks divided by channels
  • Processing element that can perform computations using data from different memory banks
  • In-memory computation result generated by combining partial results from different memory banks

Potential Applications

This technology could be applied in:

  • High-performance computing systems
  • Data centers for faster data processing
  • Artificial intelligence and machine learning applications

Problems Solved

This technology helps in:

  • Improving data processing speed
  • Reducing latency in memory access
  • Enhancing overall system performance

Benefits

The benefits of this technology include:

  • Faster computation speeds
  • Efficient memory utilization
  • Enhanced system reliability

Potential Commercial Applications

The potential commercial applications of this technology could be seen in:

  • Cloud computing services
  • Big data analytics platforms
  • High-frequency trading systems

Possible Prior Art

One possible prior art for this technology could be:

  • Memory devices with channel-level processing elements
  • Systems with in-memory computation capabilities

Unanswered Questions

How does this technology impact power consumption in memory devices?

This article does not address the potential impact of this technology on power consumption in memory devices. Further research is needed to understand the energy efficiency of such systems.

What are the scalability limitations of this memory device architecture?

The article does not discuss the scalability limitations of the memory device architecture described. Future studies could explore the maximum capacity and scalability of such systems.


Original Abstract Submitted

a memory device includes: a plurality of memory banks divided by a plurality of channels comprising a first channel and a second channel; and a channel-level processing element (pe) configured to generate an in-memory computation result by performing an operation using a first partial result generated based on data stored in a memory bank of the first channel among the plurality of memory banks and a second partial result generated based on data stored in a memory bank of the second channel among the plurality of memory banks.