Samsung electronics co., ltd. (20240184216). MONITORING UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME simplified abstract
Contents
- 1 MONITORING UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MONITORING UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MONITORING UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME
Organization Name
Inventor(s)
Yoon Sang Lee of Suwon-si (KR)
Eun Hee Jeang of Suwon-si (KR)
Dong Hyeong Kim of Suwon-si (KR)
Jeong-Gil Kim of Suwon-si (KR)
Kyung Bin Park of Suwon-si (KR)
MONITORING UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240184216 titled 'MONITORING UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME
Simplified Explanation
The abstract describes a monitoring unit for measuring the power of an EUV beam in real time, as well as a substrate treating apparatus including the monitoring unit. The apparatus consists of a source that generates the EUV beam, a scanner that transfers a mask pattern to a substrate using the EUV beam, and a monitoring unit with a detector to detect and monitor the power of the EUV beam in real time. The detector is positioned along the path of the EUV beam as it passes through a mirror assembly in the scanner and moves towards the reticle where the mask pattern is formed.
- The monitoring unit measures the power of an EUV beam in real time.
- The detector is located along the path of the EUV beam in the substrate treating apparatus.
Potential Applications
The technology can be used in semiconductor manufacturing processes where precise monitoring of EUV beam power is crucial for accurate pattern transfer onto substrates.
Problems Solved
This technology solves the problem of accurately measuring the power of an EUV beam in real time during substrate treatment processes, ensuring the quality and consistency of pattern transfer.
Benefits
- Real-time monitoring of EUV beam power - Improved accuracy and consistency in pattern transfer processes - Enhanced quality control in semiconductor manufacturing
Potential Commercial Applications
One potential commercial application of this technology is in the semiconductor industry for advanced lithography processes, where precise control and monitoring of EUV beam power are essential for high-quality pattern transfer.
Possible Prior Art
Prior art in the field of EUV lithography may include similar monitoring units or systems for measuring EUV beam power during substrate treatment processes.
Unanswered Questions
How does the monitoring unit communicate the measured power data to the substrate treating apparatus?
The abstract does not provide details on how the monitoring unit transmits the real-time power measurements to the substrate treating apparatus for process control.
What is the accuracy and precision of the monitoring unit in measuring the power of the EUV beam?
The abstract does not specify the accuracy or precision of the monitoring unit in measuring the power of the EUV beam, which is crucial for ensuring the reliability of the measurements in substrate treatment processes.
Original Abstract Submitted
a monitoring unit for measuring, in real time, the power of an euv beam transmitted to a substrate and a substrate treating apparatus including the monitoring unit. the substrate treating apparatus comprising a source which generates an euv beam, a scanner which transfers a mask pattern to a substrate by using the euv beam, and a monitoring unit which comprises a detector for detecting the euv beam and monitoring the power of the euv beam in real time, wherein the detector is disposed on a path along which the euv beam passes through a first mirror assembly provided in the scanner and moves to a reticle on which the mask pattern is formed.
