Samsung electronics co., ltd. (20240183796). APPARATUS FOR INSPECTING SURFACE OF OBJECT simplified abstract
Contents
APPARATUS FOR INSPECTING SURFACE OF OBJECT
Organization Name
Inventor(s)
YASUHIRO Hidaka of KANAGAWA (JP)
APPARATUS FOR INSPECTING SURFACE OF OBJECT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240183796 titled 'APPARATUS FOR INSPECTING SURFACE OF OBJECT
Simplified Explanation
The patent application describes a method for semiconductor inspection using second-harmonic generation within an object, such as a semiconductor device. Here is a simplified explanation of the patent application:
- Second-harmonic generation is detected at high sensitivity within a semiconductor device by irradiating a pulsed laser with a very short pulse width onto the surface of the device.
- A second-harmonic generation element is used to generate a first second-harmonic between the light source and the object.
- The phase of the first second-harmonic is modulated using an electric optical crystal, and then a fundamental wave is irradiated onto the object.
- The second-harmonic generated within the semiconductor device interferes with the first second-harmonic on a detector, modulating the intensity of the light obtained.
- The amplitude and phase of the second second-harmonic can be obtained and measured from the modulated amplitude and phase, respectively.
- Potential Applications:
- Quality control in semiconductor manufacturing - Defect detection in semiconductor devices
- Problems Solved:
- Enhancing sensitivity in semiconductor inspection - Improving accuracy in defect detection
- Benefits:
- High sensitivity detection - Precise measurement of second-harmonic generation
- Potential Commercial Applications:
- Enhanced Semiconductor Inspection Technology
- Potential Commercial Applications:
- Optimizing semiconductor manufacturing processes - Improving product quality control
- Possible Prior Art:
There may be prior art related to using second-harmonic generation for semiconductor inspection, but specific examples are not provided in the patent application.
- Unanswered Questions:
- How does the modulation of the first second-harmonic impact the accuracy of the measurements?
The modulation of the first second-harmonic allows for precise measurement of the second-harmonic generation within the semiconductor device. By controlling the phase of the first second-harmonic, the interference with the second second-harmonic can be accurately detected, leading to more reliable measurements.
- What are the limitations of using second-harmonic generation for semiconductor inspection?
While second-harmonic generation offers high sensitivity in semiconductor inspection, there may be limitations in terms of depth of penetration and the types of defects that can be detected. Further research and development may be needed to address these limitations and optimize the technology for a wider range of applications.
Original Abstract Submitted
in semiconductor inspection using second-harmonic generation within an object, a weak second-harmonic is detected at high sensitivity. in a semiconductor inspecting apparatus which irradiates a pulsed laser with a very short pulse width to a surface of a semiconductor device as the object, and measures the second-harmonic generated within the semiconductor device, a second-harmonic generation element is disposed between a light source and the object to generate a first second-harmonic. further, the apparatus modulates a phase of only the first second-harmonic using an electric optical crystal, and then, a fundamental wave is irradiated onto the object. when the fundamental wave is irradiated onto the semiconductor device, the second-harmonic is generated therefrom. the first second-harmonic interferes with the second second-harmonic on a detector, and an intensity of the light obtained by the interfering is modulated at the same period as that of the phase modulation of the first second-harmonic. an amplitude of the second second-harmonic may be obtained from a modulated amplitude thereof, and a phase of the second second-harmonic may be measured from a modulated phase thereof.
