Samsung electronics co., ltd. (20240179914). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing methods of connecting memory channel structures to gate electrodes in semiconductor devices?
- 1.11 What are the specific performance improvements that can be expected from implementing this technology in semiconductor devices?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240179914 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a gate electrode structure with multiple gate electrodes, memory channel structures, and contact plugs. The first memory channel structure extends through the first to third gate electrodes, while the second memory channel structure contacts the upper surface of the first memory channel structure and extends through the fourth gate electrode. The first contact plug has a lower portion that extends partially through the gate electrode structure and an upper portion that contacts the upper surface of the lower portion. The lower portion of the first contact plug has a varying width, while the upper portion has a width gradually increasing from bottom to top.
- Gate electrode structure with multiple gate electrodes
- Memory channel structures extending through gate electrodes
- Contact plug with varying width lower portion and gradually increasing width upper portion
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for memory storage applications, such as in flash memory or non-volatile memory devices.
Problems Solved
This technology solves the problem of efficiently connecting memory channel structures to gate electrodes in semiconductor devices, improving overall device performance and reliability.
Benefits
The benefits of this technology include enhanced electrical connectivity, improved device efficiency, and increased data storage capabilities in semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology include the production of high-performance memory devices for consumer electronics, data storage systems, and other semiconductor applications.
Possible Prior Art
One possible prior art could be the use of contact plugs with varying widths in semiconductor devices to improve electrical connectivity and device performance.
Unanswered Questions
How does this technology compare to existing methods of connecting memory channel structures to gate electrodes in semiconductor devices?
This article does not provide a direct comparison to existing methods, leaving the reader to wonder about the specific advantages of this new approach over traditional techniques.
What are the specific performance improvements that can be expected from implementing this technology in semiconductor devices?
The article does not delve into the specific performance enhancements that can be achieved by incorporating this technology, leaving room for speculation on the potential impact on device speed, power consumption, or data storage capacity.
Original Abstract Submitted
a semiconductor device includes a gate electrode structure including first to fourth gate electrodes, a first memory channel structure extending through the first to third gate electrodes, a second memory channel structure contacting an upper surface of the first memory channel structure and extending through the fourth gate electrode, and a first contact plug including a lower portion extending partially through the gate electrode structure and an upper portion on and contacting an upper surface of the lower portion. the lower portion of the first contact plug has a varying width, and the upper portion of the first contact plug has a width gradually increasing from a bottom toward a top thereof. the lower portion of the first contact plug extends through the first, second and third gate electrodes, and is electrically insulated from the first and second gate electrodes, and is electrically connected to the third gate electrode.
