Samsung electronics co., ltd. (20240179912). NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM COMPRISING THE SAME simplified abstract
Contents
- 1 NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM COMPRISING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM COMPRISING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM COMPRISING THE SAME
Organization Name
Inventor(s)
Sanghee Yoon of Hwaseong-si (KR)
Wooyong Jeon of Anyang-si (KR)
NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM COMPRISING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240179912 titled 'NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM COMPRISING THE SAME
Simplified Explanation
The patent application describes a nonvolatile memory device with a unique structure that includes a low-resistance conductive layer, a common source line layer, a stack structure, channel structures, dummy channel structures, insulating structures, bonding pads, and interconnect structures.
- Low-resistance conductive layer
- Common source line layer
- Stack structure with channel and dummy channel structures
- Insulating structure with bonding pads
- Second interconnect structure
Potential Applications
The technology described in this patent application could be applied in various electronic devices that require nonvolatile memory storage, such as smartphones, tablets, laptops, and digital cameras.
Problems Solved
This technology solves the problem of improving the performance and reliability of nonvolatile memory devices by providing a unique structure that enhances conductivity and efficiency.
Benefits
The benefits of this technology include faster data access speeds, increased storage capacity, improved durability, and enhanced overall performance of electronic devices.
Potential Commercial Applications
The technology could be commercially applied in the semiconductor industry for manufacturing nonvolatile memory devices with higher performance and reliability, catering to the growing demand for advanced storage solutions in consumer electronics.
Possible Prior Art
One possible prior art for this technology could be the development of similar nonvolatile memory devices with different structural configurations to achieve similar performance improvements.
Unanswered Questions
How does this technology compare to existing nonvolatile memory devices in terms of speed and efficiency?
This article does not provide a direct comparison with existing nonvolatile memory devices to assess the speed and efficiency improvements offered by this technology.
What are the potential challenges in implementing this technology on a large scale for commercial production?
The article does not address the potential challenges or limitations that may arise when scaling up the production of nonvolatile memory devices using this technology.
Original Abstract Submitted
a nonvolatile memory device includes a first structure and a second structure bonded to the first structure. the second structure includes a low-resistance conductive layer, a common source line layer on the low-resistance conductive layer, a stack structure above the common source line layer, a plurality of channel structures passing through a cell region of the stack structure and contacting the common source line layer, a dummy channel structure passing through a step region of the stack structure and contacting the common source line layer, a second insulating structure on the stack structure, a plurality of second bonding pads on the second insulating structure, and a second interconnect structure in the second insulating structure.
