Samsung electronics co., ltd. (20240179910). SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Jun Hyoung Kim of Suwon-si (KR)
Suk Kang Sung of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240179910 titled 'SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor memory device described in the abstract includes a cell substrate with multiple gate electrodes stacked on top of each other, a channel structure crossing the gate electrodes, and an input/output pad on the opposite surface. The first mold stack has a mold opening exposing a portion of the second mold stack, with the input/output pad overlapping the mold opening.
- Explanation of the patent/innovation:
- Cell substrate with stacked gate electrodes - Channel structure crossing gate electrodes - Input/output pad overlapping mold opening
Potential Applications
The technology described in this patent application could be used in various semiconductor memory devices, such as flash memory, DRAM, or SRAM.
Problems Solved
This technology helps in increasing the storage capacity and efficiency of semiconductor memory devices by optimizing the layout of gate electrodes and channel structures.
Benefits
- Improved performance and efficiency of memory devices - Enhanced storage capacity - Compact design for space-saving in electronic devices
Potential Commercial Applications
"Optimizing Gate Electrode Layout for Enhanced Memory Devices"
Possible Prior Art
One possible prior art could be the use of stacked gate electrodes in semiconductor memory devices to improve performance and storage capacity.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and capacity?
The article does not provide a direct comparison between this technology and existing memory devices in terms of speed and capacity. Further research or testing may be needed to determine the exact performance differences.
What are the potential limitations or challenges in implementing this technology on a larger scale for commercial production?
The article does not address the potential limitations or challenges in implementing this technology on a larger scale for commercial production. Factors such as cost, scalability, and compatibility with existing manufacturing processes could be important considerations.
Original Abstract Submitted
a semiconductor memory device includes a cell substrate including a first surface and a second surface opposite to the first surface, a first mold stack including a plurality of first gate electrodes sequentially stacked on the first surface, a second mold stack including a plurality of second gate electrodes sequentially stacked on the first mold stack, a first channel structure extending in a first direction with respect to the first surface and crossing the plurality of first gate electrodes and the plurality of second gate electrodes, and an input/output pad on the second surface, wherein the first mold stack includes a mold opening that exposes a portion of the second mold stack, and at least a portion of the input/output pad overlaps the mold opening in the first direction.
