Samsung electronics co., ltd. (20240179899). NAND FLASH DEVICE simplified abstract

NAND FLASH DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Hakseon Kim of Suwon-si (KR)

Nakjin Son of Suwon-si (KR)

Dongjin Lee of Suwon-si (KR)

Junhee Lim of Suwon-si (KR)

Seongsu Kim of Suwon-si (KR)

Hanmin Cho of Suwon-si (KR)

Chiwoong Ham of Suwon-si (KR)

NAND FLASH DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240179899 titled 'NAND FLASH DEVICE

Simplified Explanation

The abstract describes a NAND flash device with a transistor, substrate, and device isolation region. The transistor includes gate structures, source and drain regions, and lightly-doped regions.

• The NAND flash device includes a transistor with gate structures, source and drain regions, and lightly-doped regions.
• The source and drain regions extend in a first direction on both sides of the gate structure.
• The lightly-doped regions are arranged adjacent to the gate structure and have different widths in the second direction.

Potential Applications

This technology can be applied in:

• Solid-state drives
• Memory cards
• Mobile devices

Problems Solved

This technology helps in:

• Increasing memory storage capacity
• Enhancing data transfer speeds

Benefits

The benefits of this technology include:

• Improved performance
• Higher data reliability
• Lower power consumption

Potential Commercial Applications

The potential commercial applications of this technology are:

• Consumer electronics
• Data centers
• Automotive industry

Possible Prior Art

One possible prior art for this technology is the use of floating gate transistors in NAND flash devices.

Unanswered Questions

How does this technology compare to other types of flash memory?

This article does not provide a direct comparison between this technology and other types of flash memory.

What are the specific manufacturing processes involved in creating this NAND flash device?

The article does not delve into the detailed manufacturing processes used to create this specific NAND flash device.

Original Abstract Submitted

a nand flash device may include a peripheral circuit including a transistor, a substrate, and a device isolation region defining an active region of the substrate. the transistor may include a first gate structure on the active region. the transistor may include source and drain regions extending in a first direction in the active region on both sides of the first gate structure, which may include a first lightly-doped source and drain region adjacent to the first gate structure and a second lightly-doped source and drain region integrally connected thereto. the second lightly-doped source and drain region may be arranged farther from the first gate structure than the first lightly-doped source and drain region. the second lightly-doped source and drain region may have a smaller width in the second direction than a width of the first lightly-doped source and drain region in the second direction.