Samsung electronics co., ltd. (20240179435). IMAGE SENSOR simplified abstract
Contents
- 1 IMAGE SENSOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 IMAGE SENSOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
IMAGE SENSOR
Organization Name
Inventor(s)
Minwoong Seo of Hwaseong-si (KR)
Myunglae Chu of Hwaseong-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240179435 titled 'IMAGE SENSOR
Simplified Explanation
The image sensor described in the abstract includes a pixel array with multiple pixels, each containing a photodiode, a floating diffusion node, capacitors, and sampling transistors to capture and store photocharge generated by the photodiode.
- Photodiode in each pixel captures light and generates photocharge.
- Floating diffusion node integrates the photocharge.
- First capacitor stores charge corresponding to the voltage of the floating diffusion node.
- First sampling transistor samples charge to the first capacitor.
- Second capacitor stores charge corresponding to the integrated photocharge.
- Second sampling transistor samples charge to the second capacitor.
Potential Applications
This technology can be used in digital cameras, smartphones, security cameras, and other devices that require image sensing capabilities.
Problems Solved
This technology helps in capturing and storing photocharge efficiently, leading to better image quality and performance in image sensors.
Benefits
Improved image quality, higher performance, and better low-light sensitivity in image sensors.
Potential Commercial Applications
Applications in consumer electronics, surveillance systems, medical imaging devices, and automotive cameras.
Possible Prior Art
Prior art may include similar image sensor technologies with photodiodes, capacitors, and sampling transistors for capturing and storing photocharge.
Unanswered Questions
How does this technology impact power consumption in image sensors?
The abstract does not mention the power consumption implications of this technology. It would be interesting to know if this innovation helps in reducing power consumption in image sensors.
Are there any limitations to the size or resolution of the image sensor using this technology?
It is not clear from the abstract if there are any limitations to the size or resolution of the image sensor that can be implemented with this technology. Understanding any potential limitations would be helpful for further applications of this innovation.
Original Abstract Submitted
an image sensor includes a pixel array including a plurality of pixels; and processing circuitry, wherein each of the plurality of pixels includes: a photodiode; a floating diffusion node configured to integrate photocharge generated by the photodiode; a first capacitor configured to store charge corresponding to a voltage of the floating diffusion node which is reset; a first sampling transistor one terminal of which is connected to the second node, and another terminal of which is connected to the first capacitor, being configured to sample charge to the first capacitor; a second capacitor configured to store charge corresponding to the voltage of the floating diffusion node at which the photocharge has been integrated; and a second sampling transistor, one terminal of which is connected to the second node, and another terminal of which is connected to the second capacitor, being configured to sample charge to the second capacitor.
