Samsung electronics co., ltd. (20240178307). SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Kyung-Eun Byun of Suwon-si (KR)
Junyoung Kwon of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178307 titled 'SEMICONDUCTOR DEVICE INCLUDING MULTI-LAYER GATE INSULATING LAYER AND ELECTRONIC DEVICE INCLUDING THE SAME
Simplified Explanation
A semiconductor device described in the patent application includes a multi-layer gate dielectric layer and a channel layer with a two-dimensional semiconductor material. The gate dielectric layer consists of a high-k dielectric layer and an intermediate dielectric layer, with the latter having a lower dielectric constant than the former. The device also features a gate electrode, as well as source and drain electrodes on the channel layer.
- Channel layer with two-dimensional semiconductor material
- Multi-layer gate dielectric layer with high-k dielectric and intermediate dielectric layers
- Gate electrode, source, and drain electrodes on the channel layer
Potential Applications
The technology described in the patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as high-performance computing, communication systems, and sensor technologies.
Problems Solved
This innovation addresses the need for improved performance and efficiency in semiconductor devices by utilizing a multi-layer gate dielectric structure with optimized dielectric constants, enhancing the overall functionality and reliability of the devices.
Benefits
The use of a multi-layer gate dielectric structure in semiconductor devices can lead to enhanced electrical performance, reduced power consumption, and increased device longevity, ultimately improving the overall efficiency and reliability of electronic systems.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry, particularly in the manufacturing of high-performance integrated circuits, microprocessors, memory devices, and other electronic components that require advanced gate dielectric structures for optimal performance.
Possible Prior Art
One possible prior art in this field could be the use of single-layer gate dielectric structures in semiconductor devices, which may not offer the same level of performance and efficiency as the multi-layer gate dielectric structure described in the patent application.
Unanswered Questions
How does the multi-layer gate dielectric structure impact the overall performance of the semiconductor device?
The multi-layer gate dielectric structure can improve the electrical properties of the device, such as capacitance and leakage current, leading to enhanced performance and efficiency.
What are the potential challenges in implementing the multi-layer gate dielectric structure in semiconductor manufacturing processes?
One potential challenge could be the complexity of integrating multiple dielectric layers into the device fabrication process, which may require additional optimization and control to ensure consistent and reliable device performance.
Original Abstract Submitted
a semiconductor device may include a multi-layer gate dielectric layer and an electronic apparatus including the semiconductor device. the semiconductor device may include a channel layer including a two-dimensional semiconductor material, a gate dielectric layer on a first area of the channel layer, a gate electrode on the gate dielectric layer, and source and drain electrodes in a second area of the channel layer. the gate dielectric layer may include a high-k dielectric layer and an intermediate dielectric layer. the intermediate dielectric layer may be between the high-k dielectric layer and the channel layer. a dielectric constant of the intermediate dielectric layer may be less than a dielectric constant of the high-k dielectric layer.
