Samsung electronics co., ltd. (20240178294). SEMICONDUCTOR DEVICE INCLUDING INCLINED CHANNEL LAYER AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING INCLINED CHANNEL LAYER AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING INCLINED CHANNEL LAYER AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING INCLINED CHANNEL LAYER AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Keunwook Shin of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING INCLINED CHANNEL LAYER AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178294 titled 'SEMICONDUCTOR DEVICE INCLUDING INCLINED CHANNEL LAYER AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
Simplified Explanation
A semiconductor device described in the abstract includes a first electrode, a second electrode, a plurality of channel layers, and a gate electrode. The channel layers are inclined with respect to the direction from the first electrode to the second electrode.
- The semiconductor device includes a first electrode and a second electrode perpendicular to the substrate surface.
- There are multiple channel layers between the first and second electrodes.
- A gate electrode surrounds the channel layers.
- The channel layers are inclined in relation to the direction between the electrodes.
Potential Applications
This semiconductor device could be used in:
- High-speed electronic devices
- Power electronics
- Integrated circuits
Problems Solved
This technology helps in:
- Enhancing device performance
- Increasing efficiency
- Reducing power consumption
Benefits
The benefits of this technology include:
- Improved functionality
- Higher speed operation
- Lower power consumption
Potential Commercial Applications
This technology could be applied in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art could be:
- Traditional semiconductor devices with straight channel layers
Unanswered Questions
How does the inclination of the channel layers affect the overall performance of the semiconductor device?
The inclination of the channel layers could impact the speed and efficiency of the device by altering the flow of electrons through the channels.
What materials are used in the construction of the semiconductor device described in the abstract?
The materials used in the construction of the semiconductor device could influence its durability and performance, but this information is not provided in the abstract.
Original Abstract Submitted
a semiconductor device may include a first electrode and a second electrode on a substrate and arranged perpendicular to a surface of the substrate, a plurality of channel layers between the first electrode and the second electrode, and a gate electrode surrounding the plurality of channel layers. the plurality of channel layers may be inclined with respect to a direction from the first electrode to the second electrode. an electronic device may include the semiconductor device.
