Samsung electronics co., ltd. (20240178255). IMAGE SENSOR simplified abstract
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178255 titled 'IMAGE SENSOR
Simplified Explanation
The image sensor described in the patent application includes a first substrate with a photoelectric conversion element, gate electrodes, and wiring structures, as well as a second substrate with gate electrodes, impurity regions, and wiring structures. The floating diffusion region in the first substrate is connected to the impurity region in the second substrate through the wiring structures.
- First substrate with photoelectric conversion element
- Gate electrodes and wiring structures on both substrates
- Connection between floating diffusion region and impurity region through wiring structures
Potential Applications
The technology described in the patent application could be used in:
- Digital cameras
- Smartphones
- Surveillance cameras
Problems Solved
This technology helps improve the performance and efficiency of image sensors by enabling better connectivity between different regions within the sensor.
Benefits
The benefits of this technology include:
- Enhanced image quality
- Improved signal processing
- Higher sensitivity to light
Potential Commercial Applications
The technology could have commercial applications in:
- Consumer electronics
- Security systems
- Medical imaging devices
Possible Prior Art
One possible prior art for this technology could be the development of image sensors with improved connectivity between different regions within the sensor.
Unanswered Questions
How does this technology compare to existing image sensor designs in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing image sensor designs. Further research or testing would be needed to determine the specific advantages and disadvantages of this technology compared to others on the market.
Original Abstract Submitted
an image sensor includes a first substrate having a photoelectric conversion element. a first gate electrode is on a first side of the first substrate. a floating diffusion region is in the first substrate. a first wiring structure is on the first side and includes a first wiring layer and a first bonding pad. a second substrate has a third side that includes second and third gate electrodes. an impurity region is in the second substrate. a second wiring structure is on the third side and includes a second wiring layer and a second bonding pad directly contacting the first bonding pad. a fourth gate electrode is on a fourth side of the second substrate. a third wiring structure is on the fourth side and includes a third wiring layer. the floating diffusion region is connected to the impurity region through the first wiring structure and the second wiring structure.
