Samsung electronics co., ltd. (20240178229). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Munhyeon Kim of Hwaseong-si (KR)
Mingyu Kim of Hwaseong-si (KR)
Doyoung Choi of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178229 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes various components such as an active pattern, source/drain patterns, fence spacers, channel pattern, gate electrode, and gate spacer. The fence spacer has a greater thickness in one direction compared to the gate spacer in another direction.
- Active pattern on a substrate
- Source/drain patterns on the active pattern
- Fence spacer on side surfaces of the source/drain patterns
- Channel pattern between the source/drain patterns
- Gate electrode crossing the channel pattern
- Gate spacer on a side surface of the gate electrode
Potential Applications
The technology described in the patent application could be applied in the following areas:
- Semiconductor manufacturing
- Integrated circuits
- Electronics industry
Problems Solved
The innovation addresses the following issues:
- Enhancing performance of semiconductor devices
- Improving efficiency of electronic components
- Reducing power consumption in devices
Benefits
The technology offers the following benefits:
- Increased speed and reliability of devices
- Enhanced functionality of integrated circuits
- Lower energy consumption in electronic devices
Potential Commercial Applications
The technology could be commercially applied in:
- Smartphone manufacturing
- Computer hardware production
- Consumer electronics industry
Possible Prior Art
One possible prior art could be the use of gate spacers in semiconductor devices to control the channel width and improve device performance.
Unanswered Questions
How does this technology compare to existing semiconductor device designs in terms of performance and efficiency?
The article does not provide a direct comparison with existing semiconductor device designs to evaluate performance and efficiency.
What are the specific manufacturing processes involved in creating the semiconductor device described in the patent application?
The article does not detail the specific manufacturing processes used to create the semiconductor device.
Original Abstract Submitted
a semiconductor device is disclosed. the semiconductor device may include an active pattern on a substrate, source/drain patterns on the active pattern, a fence spacer on side surfaces of each of the source/drain patterns, a channel pattern interposed between the source/drain patterns, a gate electrode crossing the channel pattern and extending in a first direction, and a gate spacer on a side surface of the gate electrode. a first thickness of an upper portion of the fence spacer in the first direction may be greater than a second thickness of the gate spacer in a second direction crossing the first direction.
