Samsung electronics co., ltd. (20240178202). SEMICONDUCTOR DEVICES INCLUDING BONDED SEMICONDUCTOR LAYERS AND MANUFACTURING METHODS OF THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES INCLUDING BONDED SEMICONDUCTOR LAYERS AND MANUFACTURING METHODS OF THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES INCLUDING BONDED SEMICONDUCTOR LAYERS AND MANUFACTURING METHODS OF THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does the size difference between the first and second metal pads impact the overall performance of the semiconductor device?
- 1.9.3 What are the specific electrical or mechanical properties of the semiconductor layer that enable the placement of metal pads in the described configuration?
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICES INCLUDING BONDED SEMICONDUCTOR LAYERS AND MANUFACTURING METHODS OF THE SAME
Organization Name
Inventor(s)
Byeongchan Kim of Suwon-si (KR)
Un-Byoung Kang of Suwon-si (KR)
SEMICONDUCTOR DEVICES INCLUDING BONDED SEMICONDUCTOR LAYERS AND MANUFACTURING METHODS OF THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178202 titled 'SEMICONDUCTOR DEVICES INCLUDING BONDED SEMICONDUCTOR LAYERS AND MANUFACTURING METHODS OF THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a semiconductor layer with a wire and an electrical element, as well as multiple metal pads on the surface of the semiconductor layer. The metal pads consist of a larger first metal pad and a smaller second metal pad, with the second metal pad positioned between two regions of the semiconductor layer where the surface metal density is zero.
- The semiconductor device includes a semiconductor layer with a wire and an electrical element.
- The device has multiple metal pads on the surface, including a larger first metal pad and a smaller second metal pad.
- The second metal pad is located between two regions of the semiconductor layer where the surface metal density is zero.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits, sensors, and microprocessors.
Problems Solved
This innovation helps in optimizing the layout and design of semiconductor devices, improving their performance and efficiency.
Benefits
The use of multiple metal pads with varying sizes can enhance the functionality and reliability of semiconductor devices, leading to better overall performance.
Potential Commercial Applications
The technology could find applications in the electronics industry for the production of high-performance electronic devices, potentially increasing market competitiveness.
Possible Prior Art
Prior art may include similar semiconductor devices with metal pads of different sizes for improved performance and functionality.
Unanswered Questions
How does the size difference between the first and second metal pads impact the overall performance of the semiconductor device?
The abstract does not provide specific details on how the size difference between the metal pads affects the device's performance.
What are the specific electrical or mechanical properties of the semiconductor layer that enable the placement of metal pads in the described configuration?
The abstract does not delve into the specific properties of the semiconductor layer that allow for the placement of metal pads as described.
Original Abstract Submitted
a semiconductor device includes: a semiconductor layer including a wire and an electrical element; and a plurality of metal pads on a surface of the semiconductor layer, wherein the plurality of metal pads includes a first metal pad and a second metal pad, wherein the second metal pad is smaller in surface area or diameter on the surface of the semiconductor layer than the first metal pad, and wherein the second metal pad is between a first region of the surface of the semiconductor layer where the first metal pad is and a second region of the surface of the semiconductor layer where a surface metal density is zero (0).
