Samsung electronics co., ltd. (20240178168). SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
Joonyoung Kwon of Suwon-si (KR)
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178168 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a first substrate structure with circuit elements, interconnection structure, and metal bonding layers, as well as a second substrate structure connected to the first one, with gate electrodes, channel structures, interconnection structure, metal bonding layers, and dummy pattern layers.
- The first substrate structure contains circuit elements and metal bonding layers.
- The second substrate structure includes gate electrodes, channel structures, interconnection structure, metal bonding layers, and dummy pattern layers.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and automotive electronics.
Problems Solved
This technology solves the problem of integrating different substrate structures in a semiconductor device efficiently and effectively, allowing for improved performance and functionality.
Benefits
The benefits of this technology include enhanced device performance, increased functionality, improved reliability, and potentially reduced manufacturing costs.
Potential Commercial Applications
The potential commercial applications of this technology could include the production of high-performance integrated circuits for consumer electronics, telecommunications, and industrial applications.
Possible Prior Art
One possible prior art for this technology could be the integration of multiple substrate structures in semiconductor devices using different bonding techniques and materials.
Unanswered Questions
How does this technology compare to existing methods of integrating substrate structures in semiconductor devices?
This article does not provide a direct comparison to existing methods, leaving the reader to wonder about the specific advantages and disadvantages of this new approach.
What are the specific performance improvements that can be expected from implementing this technology?
The article does not delve into the specific performance enhancements that can be achieved by using this technology, leaving the reader curious about the potential gains in speed, power efficiency, or other key metrics.
Original Abstract Submitted
a semiconductor device includes a first substrate structure including a substrate, circuit elements on the substrate, a first interconnection structure on the circuit elements, and first metal bonding layers on the first interconnection structure; and a second substrate structure connected to the first substrate structure, and the second substrate structure includes: a plating layer; gate electrodes stacked and spaced apart from each other in a first direction below the plating layer; channel structures penetrating through the gate electrodes and extending in the first direction; a separation region penetrating through the gate electrodes and extending in a second direction; a second interconnection structure below the gate electrodes and the channel structures; second metal bonding layers below the second interconnection structure and connected to the first metal bonding layers; and dummy pattern layers between the second metal bonding layers, extending in the second direction, and including an insulating material.
