Samsung electronics co., ltd. (20240178068). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN-TYPE ACTIVE REGION simplified abstract

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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN-TYPE ACTIVE REGION

Organization Name

samsung electronics co., ltd.

Inventor(s)

Seungju Hwang of Suwon-si (KR)

Shigenobu Maeda of Suwon-si (KR)

Myoungkyu Park of Suwon-si (KR)

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN-TYPE ACTIVE REGION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240178068 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN-TYPE ACTIVE REGION

Simplified Explanation

The method described in the patent application involves forming mandrel patterns on a substrate, creating fin groups and dummy fin groups, and removing the dummy fin groups to achieve a specific fin pitch.

  • Forming mandrel patterns on a substrate at a specific pitch
  • Creating fin groups and dummy fin groups by patterning the substrate
  • Removing the dummy fin groups to achieve a desired fin pitch

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance integrated circuits and memory chips.

Problems Solved

This method allows for precise control over the spacing and arrangement of fins in semiconductor devices, which can improve performance and efficiency.

Benefits

The precise arrangement of fins can lead to enhanced device performance, increased energy efficiency, and potentially smaller chip sizes.

Potential Commercial Applications

This technology could be valuable in the production of cutting-edge electronics for various industries, including consumer electronics, telecommunications, and automotive.

Possible Prior Art

One possible prior art could be the use of dummy structures in semiconductor manufacturing to control spacing and alignment of features on a substrate.

What is the impact of this technology on semiconductor manufacturing processes?

This technology can streamline the process of creating semiconductor devices by allowing for more precise control over the arrangement of fins, leading to improved performance and efficiency.

How does this innovation compare to existing methods of fin patterning in semiconductor manufacturing?

This innovation offers a more efficient and controlled way of patterning fins on a substrate, potentially leading to better overall device performance and energy efficiency compared to traditional methods.


Original Abstract Submitted

a method of manufacturing a semiconductor device includes: forming a plurality of first mandrel patterns at a first mandrel pitch on a substrate; forming a first fin group and a first dummy fin group by patterning the substrate, wherein the first fin group is adjacent to the first dummy fin group in a first direction; and removing the first dummy fin group, wherein the first fin group includes a first fin and a second fin adjacent to each other and arranged at a first fin pitch in the first direction. the first dummy fin group includes a first dummy fin and a second dummy fin adjacent to each other and arranged at the first fin pitch in the first direction. the second fin and the first dummy fin, which is adjacent to the second fin, are arranged at a second fin pitch that is greater than the first fin pitch.