Samsung electronics co., ltd. (20240178061). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing contact structure designs in terms of performance and efficiency?
- 1.11 What specific materials are used in the construction of the middle insulating structure and contact structures?
- 1.12 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Chunghwan Shin of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240178061 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The integrated circuit device described in the abstract includes a middle insulating structure on a substrate, with first and second contact structures passing through the middle insulating structure. The first contact structure extends by a certain vertical length from the top surface of the middle insulating structure towards the substrate, while the second contact structure extends by a greater vertical length from the top surface of the middle insulating structure towards the substrate. The first contact structure has a planar top surface, while the second contact structure has a convex top surface away from the substrate.
- Middle insulating structure on a substrate
- First contact structure with specific vertical length
- Second contact structure with greater vertical length
- Planar top surface of the first contact structure
- Convex top surface of the second contact structure
Potential Applications
The technology described in this patent application could be applied in the field of semiconductor manufacturing, specifically in the development of integrated circuits with improved contact structures.
Problems Solved
This technology solves the problem of optimizing contact structures within integrated circuits to improve performance and efficiency.
Benefits
The benefits of this technology include enhanced functionality and reliability of integrated circuits, potentially leading to improved overall device performance.
Potential Commercial Applications
- Semiconductor industry: for the production of advanced integrated circuits with optimized contact structures.
Possible Prior Art
There may be prior art related to the optimization of contact structures within integrated circuits, but specific examples are not provided in this abstract.
Unanswered Questions
How does this technology compare to existing contact structure designs in terms of performance and efficiency?
The abstract does not provide a direct comparison with existing contact structure designs, leaving this aspect open for further exploration and analysis.
What specific materials are used in the construction of the middle insulating structure and contact structures?
The abstract does not mention the materials used in the construction of these structures, which could be crucial for understanding the overall performance and characteristics of the integrated circuit device.
Original Abstract Submitted
an integrated circuit device includes a middle insulating structure on a substrate, a first contact structure passing through the middle insulating structure and extending by a first vertical length from a top surface of the middle insulating structure toward the substrate, and a second contact structure passing through the middle insulating structure. the middle insulating structure may have a top surface extending in a lateral direction at a first vertical level. the second contact structure may extend by a second vertical length greater than the first vertical length from the top surface of the middle insulating structure toward the substrate. the first contact structure may have a first top surface extending planar along an extension line of the top surface of the middle insulating structure. the second contact structure may have a second top surface, which may be convex in a direction away from the substrate.
