Samsung electronics co., ltd. (20240177768). APPARATUS AND METHOD WITH IN-MEMORY COMPUTING (IMC) PROCESSOR simplified abstract
Contents
APPARATUS AND METHOD WITH IN-MEMORY COMPUTING (IMC) PROCESSOR
Organization Name
Inventor(s)
Seungchul Jung of Suwon-si (KR)
Soon-Wan Kwon of Suwon-si (KR)
APPARATUS AND METHOD WITH IN-MEMORY COMPUTING (IMC) PROCESSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240177768 titled 'APPARATUS AND METHOD WITH IN-MEMORY COMPUTING (IMC) PROCESSOR
Simplified Explanation
The patent application describes an apparatus with a static random access memory (SRAM) cell that includes inverters and transistors connected in a specific configuration.
- The apparatus includes a static random access memory (SRAM) cell.
- The SRAM cell consists of a first inverter, a second inverter, and a third inverter with inverter transistors.
- The output terminal of the first inverter is connected to a source terminal of the second inverter transistor.
- Potential Applications
This technology could be applied in electronic devices requiring fast and reliable memory storage, such as computers, smartphones, and IoT devices.
- Problems Solved
This technology solves the problem of data loss or corruption in memory storage devices by providing a stable and efficient SRAM cell design.
- Benefits
The benefits of this technology include improved data retention, faster access times, and reduced power consumption in electronic devices.
- Potential Commercial Applications
The optimized SRAM cell design could be utilized by semiconductor manufacturers to produce high-performance memory chips for a wide range of consumer electronics.
- Possible Prior Art
One possible prior art for this technology could be existing SRAM cell designs with different configurations of inverters and transistors.
- Unanswered Questions
- How does this technology compare to existing SRAM cell designs in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing SRAM cell designs, leaving the reader to wonder about the specific advantages of this innovation.
- Are there any limitations or drawbacks to implementing this SRAM cell design in practical electronic devices?
The article does not address any potential limitations or drawbacks of implementing this SRAM cell design, leaving room for further exploration of its practical implications.
Original Abstract Submitted
an apparatus includes a static random access memory (sram) cell including a first inverter and a second inverter, and a third inverter including a first inverter transistor and a second inverter transistor. an output terminal of the first inverter is connected to a source terminal of the second inverter transistor.
