Samsung electronics co., ltd. (20240173815). CHEMICAL MECHANICAL POLISHING APPARATUS simplified abstract

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CHEMICAL MECHANICAL POLISHING APPARATUS

Organization Name

samsung electronics co., ltd.

Inventor(s)

DONGHOON Kwon of Suwon-si (KR)

CHEMICAL MECHANICAL POLISHING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240173815 titled 'CHEMICAL MECHANICAL POLISHING APPARATUS

Simplified Explanation

The chemical mechanical polishing apparatus described in the abstract includes a polishing platen with an electromagnet, a lower polishing pad with a first area made of magnetic material and a second area made of non-magnetic material, an upper polishing pad with a second magnetic material, and a polishing head for rotating and providing a wafer on the upper polishing pad.

  • Polishing platen with electromagnet
  • Lower polishing pad with magnetic and non-magnetic areas
  • Upper polishing pad with magnetic material
  • Polishing head for rotating and providing wafer

Potential Applications

The technology could be used in semiconductor manufacturing processes for polishing wafers.

Problems Solved

The apparatus helps in achieving precise and uniform polishing of wafers, which is crucial for semiconductor device fabrication.

Benefits

- Improved polishing efficiency - Enhanced control over the polishing process - Consistent results in wafer surface quality

Potential Commercial Applications

"Chemical Mechanical Polishing Apparatus for Semiconductor Manufacturing"

Possible Prior Art

There may be similar patents or technologies related to chemical mechanical polishing apparatus used in semiconductor manufacturing processes.

Unanswered Questions

How does the apparatus handle different sizes of wafers?

The abstract does not mention how the apparatus accommodates various sizes of wafers for polishing.

What materials are used in the upper polishing pad?

The abstract specifies the second magnetic material in the upper polishing pad but does not provide details on the overall composition of the pad.


Original Abstract Submitted

a chemical mechanical polishing apparatus includes a polishing platen that includes an electromagnet and is rotatable; a lower polishing pad that is positioned on the polishing platen, the lower polishing pad including a first area and a second area, the first area including a first magnetic material and the second area including a non-magnetic material, wherein the first area overlaps the electromagnet; an upper polishing pad that is positioned on the lower polishing pad, includes a second magnetic material, and overlaps the first area; and a polishing head configured to provide a wafer on the upper polishing pad and is rotatable.