Samsung electronics co., ltd. (20240164116). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Joo-Heon Kang of Suwon-si (KR)
Kyunghoon Kim of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240164116 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
A semiconductor device described in the patent application includes a gate stacked structure with alternating gate patterns and insulating patterns, a gate insulating layer on the sidewall of the gate stacked structure, a channel layer surrounded by the gate insulating layer, a source line surrounded by the channel layer, a variable resistive layer surrounded by the channel layer, and a drain line surrounded by the channel layer.
- Gate stacked structure with alternating gate patterns and insulating patterns
- Gate insulating layer on the sidewall of the gate stacked structure
- Channel layer surrounded by the gate insulating layer
- Source line surrounded by the channel layer
- Variable resistive layer surrounded by the channel layer
- Drain line surrounded by the channel layer
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications such as memory storage, logic circuits, and sensors.
Problems Solved
This technology helps in enhancing the performance and efficiency of semiconductor devices by providing a more compact and reliable structure for better control of electrical signals.
Benefits
The benefits of this technology include improved functionality, increased integration density, reduced power consumption, and enhanced overall performance of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the fields of consumer electronics, telecommunications, automotive electronics, and industrial automation.
Possible Prior Art
One possible prior art could be the use of similar gate stacked structures in semiconductor devices for improving performance and functionality.
What are the specific electronic applications where this technology could be most beneficial?
This article does not specify the specific electronic applications where this technology could be most beneficial.
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing semiconductor device structures in terms of performance and efficiency.
Original Abstract Submitted
a semiconductor device includes a gate stacked structure including gate patterns and insulating patterns that are alternately stacked with each other; a gate insulating layer on a sidewall of the gate stacked structure; a channel layer surrounded by the gate insulating layer; a source line surrounded by the channel layer; a variable resistive layer surrounded by the channel layer; and a drain line surrounded by the channel layer.
