Samsung electronics co., ltd. (20240164103). NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Soodoo Chae of Seongnam-si (KR)

Myoungbum Lee of Seoul (KR)

HuiChang Moon of Yongin-si (KR)

Hansoo Kim of Suwon-si (KR)

JinGyun Kim of Yongin-si (KR)

Kihyun Kim of Hwaseong-si (KR)

Siyoung Choi of Seongnam-si (KR)

Hoosung Cho of Yongin-si (KR)

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240164103 titled 'NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

The patent application describes a three-dimensional nonvolatile memory device and a method for fabricating the same, which includes a semiconductor substrate, active pillars, gate electrodes, and supporters.

• The semiconductor substrate has a memory cell region and a contact region.
• The active pillars extend perpendicularly to the semiconductor substrate in the memory cell region.
• The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region, and are stacked on the semiconductor substrate.
• The supporters extend perpendicularly in the contact region to penetrate at least one or more of the gate electrodes.

Potential Applications

This technology could be applied in:

• High-density nonvolatile memory devices
• Data storage systems
• Embedded memory in electronic devices

Problems Solved

This technology addresses:

• Increasing demand for higher memory density
• Need for faster and more reliable data storage solutions

Benefits

The benefits of this technology include:

• Improved memory density
• Enhanced data storage capabilities
• Increased reliability and speed of memory devices

Potential Commercial Applications

Potential commercial applications of this technology could include:

• Memory chip manufacturing companies
• Electronics manufacturers
• Data storage companies

Possible Prior Art

There may be prior art related to:

• Three-dimensional memory devices
• Nonvolatile memory technologies

Unanswered Questions

1. How does the fabrication process of this three-dimensional nonvolatile memory device compare to traditional memory devices? 2. What specific materials are used in the construction of the active pillars and gate electrodes in this technology?

Original Abstract Submitted

a three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. the semiconductor substrate includes a memory cell region and a contact region. the active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. the gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. the supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.