Samsung electronics co., ltd. (20240164103). NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
Contents
- 1 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Soodoo Chae of Seongnam-si (KR)
HuiChang Moon of Yongin-si (KR)
Kihyun Kim of Hwaseong-si (KR)
Siyoung Choi of Seongnam-si (KR)
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240164103 titled 'NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The patent application describes a three-dimensional nonvolatile memory device and a method for fabricating the same, which includes a semiconductor substrate, active pillars, gate electrodes, and supporters.
- The semiconductor substrate has a memory cell region and a contact region.
- The active pillars extend perpendicularly to the semiconductor substrate in the memory cell region.
- The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region, and are stacked on the semiconductor substrate.
- The supporters extend perpendicularly in the contact region to penetrate at least one or more of the gate electrodes.
Potential Applications
This technology could be applied in:
- High-density nonvolatile memory devices
- Data storage systems
- Embedded memory in electronic devices
Problems Solved
This technology addresses:
- Increasing demand for higher memory density
- Need for faster and more reliable data storage solutions
Benefits
The benefits of this technology include:
- Improved memory density
- Enhanced data storage capabilities
- Increased reliability and speed of memory devices
Potential Commercial Applications
Potential commercial applications of this technology could include:
- Memory chip manufacturing companies
- Electronics manufacturers
- Data storage companies
Possible Prior Art
There may be prior art related to:
- Three-dimensional memory devices
- Nonvolatile memory technologies
Unanswered Questions
1. How does the fabrication process of this three-dimensional nonvolatile memory device compare to traditional memory devices? 2. What specific materials are used in the construction of the active pillars and gate electrodes in this technology?
Original Abstract Submitted
a three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. the semiconductor substrate includes a memory cell region and a contact region. the active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. the gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. the supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.
- Samsung electronics co., ltd.
- Soodoo Chae of Seongnam-si (KR)
- Myoungbum Lee of Seoul (KR)
- HuiChang Moon of Yongin-si (KR)
- Hansoo Kim of Suwon-si (KR)
- JinGyun Kim of Yongin-si (KR)
- Kihyun Kim of Hwaseong-si (KR)
- Siyoung Choi of Seongnam-si (KR)
- Hoosung Cho of Yongin-si (KR)
- H10B43/27
- H01L23/498
- H01L23/522
- H01L23/535
- H01L29/40
- H01L29/423
- H10B43/10
- H10B43/20
- H10B43/50