Samsung electronics co., ltd. (20240164101). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract

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THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jiwon Kim of Suwon-si (KR)

Jiyoung Kim of Suwon-si (KR)

Woosung Yang of Suwon-si (KR)

Dohyung Kim of Suwon-si (KR)

Sukkang Sung of Suwon-si (KR)

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240164101 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Simplified Explanation

The abstract describes a 3D semiconductor memory device with a cell array structure including vertical channel structures and connection vias.

  • The 3D semiconductor memory device comprises a first substrate, a peripheral circuit structure, and a cell array structure.
  • The cell array structure includes a second substrate, a stack structure with interlayer dielectric layers and conductive patterns, vertical channel structures with vertical semiconductor patterns, and connection vias.
  • The vertical channel structures and connection vias are connected to the top surfaces of the vertical semiconductor patterns.

Potential Applications

This technology could be applied in:

  • High-performance computing systems
  • Data storage devices

Problems Solved

This technology helps address:

  • Increasing demand for higher memory capacity
  • Improving data processing speed

Benefits

The benefits of this technology include:

  • Enhanced memory storage capabilities
  • Faster data access and retrieval

Potential Commercial Applications

Optimized for SEO: "Commercial Applications of 3D Semiconductor Memory Devices"

  • Consumer electronics
  • Cloud computing infrastructure

Possible Prior Art

No prior art information is available at this time.

Unanswered Questions

How does this technology compare to traditional 2D memory devices in terms of performance and efficiency?

This article does not provide a direct comparison between 3D semiconductor memory devices and traditional 2D memory devices. Further research or analysis would be needed to address this question.

What are the potential challenges in scaling up the production of 3D semiconductor memory devices for mass commercial use?

The article does not discuss the scalability challenges of mass-producing 3D semiconductor memory devices. Additional information or studies would be required to explore this aspect further.


Original Abstract Submitted

disclosed are 3d semiconductor memory devices and electronic systems including the same. the 3d semiconductor memory device comprises a first substrate, a peripheral circuit structure on the first substrate, and a cell array structure on the peripheral circuit structure. the cell array structure includes a second substrate, a stack structure between the second substrate and the peripheral circuit structure and including interlayer dielectric layers and conductive patterns that are stacked alternately with the interlayer dielectric layers, vertical channel structures that include respective portions the stack structure and include vertical semiconductor patterns, respectively, and connection vias that include respective portions the second substrate and are connected to respective top surfaces of the vertical semiconductor patterns.