Samsung electronics co., ltd. (20240164094). SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
Jung Min Park of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240164094 titled 'SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
Simplified Explanation
The semiconductor memory device described in the patent application includes a unique channel structure with specific crystalline films and impurities. Here are some key points to note:
- The device comprises a substrate, a mold structure with gate electrodes and insulating films, and a channel structure with a semiconductor pattern and dielectric film.
- The dielectric film in the channel structure consists of a first crystalline film (with a first matrix and impurity) and a second crystalline film (with a second matrix and impurity).
- The first and second matrices contain materials like hafnium oxide (HfO), zirconium oxide (ZrO), and various compositions of HfZrO.
- The impurities in the crystalline films are limited to 10 at % or less.
- Potential Applications
This technology could be applied in various semiconductor memory devices, such as flash memory, DRAM, and SRAM.
- Problems Solved
This innovation addresses issues related to performance and reliability in semiconductor memory devices by optimizing the structure of the channel and dielectric films.
- Benefits
The use of specific crystalline films and impurities enhances the overall performance, stability, and efficiency of the semiconductor memory device.
- Potential Commercial Applications
The technology could be valuable for semiconductor manufacturers looking to improve the quality and functionality of their memory products.
- Possible Prior Art
Prior research may have explored similar structures in semiconductor devices, but the specific combination of materials and impurities in the crystalline films sets this innovation apart.
- Unanswered Questions
- How does this technology compare to existing memory device structures in terms of performance and reliability?
This article does not provide a direct comparison with existing memory device structures, so it is unclear how this innovation stacks up against current technologies.
- What are the potential challenges or limitations in implementing this technology on a larger scale in semiconductor manufacturing?
The article does not address the scalability or practicality of mass-producing semiconductor memory devices with this specific channel structure, leaving room for further exploration into potential challenges in implementation.
Original Abstract Submitted
a semiconductor memory device comprises, a substrate, a mold structure including gate electrodes and mold insulating films alternately stacked on the substrate, and a channel structure penetrating the mold structure, wherein the channel structure comprises a semiconductor pattern and a dielectric film on the semiconductor pattern, wherein the dielectric film comprises a first crystalline film in contact with the gate electrodes and a second crystalline film between the first crystalline film and the semiconductor pattern, wherein the first crystalline film includes a first matrix and a first impurity and the second crystalline film includes a second matrix and a second impurity, wherein each of the first matrix and the second matrix comprises at least one of hfo, hfzro(0.5<x<1) and hfzro(0.5<y<1), and wherein each of the first impurity and the second impurity is 10 at % or less of the first crystalline film and second crystalline film, respectively.
