Samsung electronics co., ltd. (20240164091). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Chung Jin Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240164091 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a source structure with a support source layer, gate stack structure, memory channel structure, and separation structure. The support source layer has a first source part for the memory channel structure and a second source part for the separation structure, with the first part at a lower level than the second part.
- Source structure with support source layer, gate stack structure, memory channel structure, and separation structure
- Support source layer divided into first and second source parts
- First source part for memory channel structure, second source part for separation structure
- First source part at lower level than second source part
Potential Applications
The technology described in the patent application could be applied in:
- Semiconductor manufacturing
- Memory devices
- Electronic systems
Problems Solved
The innovation addresses issues related to:
- Efficient memory channel and separation structure integration
- Improved performance in semiconductor devices
- Enhanced reliability and durability
Benefits
The benefits of this technology include:
- Higher efficiency in semiconductor devices
- Increased performance and reliability
- Enhanced functionality in electronic systems
Potential Commercial Applications
The technology could find commercial applications in:
- Memory chip manufacturing
- Consumer electronics
- Telecommunications industry
Possible Prior Art
One possible prior art could be the integration of memory channels and separation structures in semiconductor devices, but the specific configuration described in the patent application may be novel.
Unanswered Questions
How does this technology compare to existing semiconductor device structures?
The article does not provide a direct comparison with existing semiconductor device structures to highlight the advantages of the innovation.
What specific manufacturing processes are involved in fabricating the semiconductor device?
The patent application abstract does not detail the specific manufacturing processes used to fabricate the semiconductor device, leaving a gap in understanding the production methods.
Original Abstract Submitted
disclosed are semiconductor devices, electronic systems including the same, and methods of fabricating the same. the semiconductor device comprises a source structure that includes a support source layer, a gate stack structure on the support source layer, a memory channel structure that penetrates through the gate stack structure and the support source layer, and a separation structure that penetrates through the gate stack structure and the support source layer. the support source layer includes a first source part through which the memory channel structure penetrates, and a second source part through which the separation structure penetrates. a top surface of the first source part is at a level lower than that of a top surface of the second source part.
