Samsung electronics co., ltd. (20240162322). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Donghoon Hwang of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162322 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes channel patterns with different widths and a buffer channel pattern between them. The buffer channel pattern changes width from the first subset to the second subset.
- The semiconductor device has an active region on a substrate.
- Channel patterns are present on the active region.
- Gate electrodes are on the channel patterns.
- The channel patterns have different widths in subsets.
- A buffer channel pattern separates the subsets and changes width.
Potential Applications
This technology could be applied in:
- Semiconductor manufacturing
- Integrated circuits
- Electronics industry
Problems Solved
This technology helps in:
- Improving performance of semiconductor devices
- Enhancing efficiency of electronic components
Benefits
The benefits of this technology include:
- Increased functionality of semiconductor devices
- Better control over electronic signals
- Enhanced overall performance
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
There may be prior art related to:
- Semiconductor device manufacturing processes
- Channel pattern design in electronic components
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance?
This article does not provide a direct comparison with existing semiconductor devices, so it is unclear how this technology stacks up against current solutions.
What specific materials are used in the construction of the buffer channel pattern?
The article does not delve into the specific materials used in the buffer channel pattern, leaving this aspect open for further exploration.
Original Abstract Submitted
a semiconductor device may include an active region on a substrate, channel patterns on the active region, and gate electrodes on the channel patterns, respectively, and extending in a first direction. the channel patterns may include a first subset of the channel patterns, each of which has a first width, and a second subset of the channel patterns, each of which has a second width. the first and second subsets may be adjacent to each other in a second direction. the channel patterns may further include a buffer channel pattern between the first subset and the second subset. the buffer channel pattern may include a connection side surface extending in the first direction, and the connection side surface may be configured such that a width of the buffer channel pattern changes from the first width to the second width when moving from the first subset to the second subset.
