Samsung electronics co., ltd. (20240162309). 3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE WITH SPACER STRUCTURE AT SIDE SURFACE THEREOF simplified abstract

3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE WITH SPACER STRUCTURE AT SIDE SURFACE THEREOF

Organization Name

samsung electronics co., ltd.

Inventor(s)

Myung Yang of Niskayuna NY (US)

Myunghoon Jung of Clifton Park NY (US)

Seungmin Song of Clifton Park NY (US)

Seungchan Yun of Waterford NY (US)

Sejung Park of Watervliet NY (US)

Kang-ill Seo of Springfield VA (US)

3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE WITH SPACER STRUCTURE AT SIDE SURFACE THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162309 titled '3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE WITH SPACER STRUCTURE AT SIDE SURFACE THEREOF

Simplified Explanation

The abstract describes a three-dimensional field-effect transistor (3dsfet) device with two source/drain regions, isolated through an interlayer structure, and a spacer formed at the upper portion of the sidewall of the contact structures.

• The device includes a 1source/drain region on a substrate and a 2source/drain region on the 1source/drain region.
• There are 1source/drain contact structures on the 1source/drain region and 2source/drain contact structures on the 2source/drain region.
• The 2source/drain region is isolated from the 1source/drain region through an interlayer structure.
• A spacer is formed at the upper portion of the sidewall of the 2source/drain contact structure, between the 1source/drain contact structure and the 2source/drain contact structure.

Potential Applications

This technology can be applied in:

• High-performance computing devices
• Advanced electronic devices

Problems Solved

• Improved performance and efficiency of field-effect transistors
• Enhanced integration of components in semiconductor devices

Benefits

• Increased speed and reliability of electronic devices
• Higher density of components on a chip
• Better heat dissipation capabilities

Potential Commercial Applications

Optimizing 3D field-effect transistors for:

• Consumer electronics
• Telecommunications equipment

Possible Prior Art

One possible prior art could be the development of 3D transistors with isolated source/drain regions and spacer structures to improve device performance.

How does this technology compare to traditional 2D field-effect transistors in terms of performance and efficiency?

This article does not directly compare the performance and efficiency of 3D field-effect transistors to traditional 2D transistors. Further research or testing may be needed to provide a comprehensive answer to this question.

What are the potential challenges in scaling up the production of these 3D field-effect transistors for mass commercial applications?

The article does not address the scalability challenges that may arise when mass-producing these 3D field-effect transistors. Additional studies or industry insights could shed light on this aspect of the technology.

Original Abstract Submitted

provided is a three-dimensional field-effect transistor (3dsfet) device including: a 1source/drain region on a substrate, and a 2source/drain region on the 1source/drain region; and a 1source/drain contact structure on the 1source/drain region, and a 2source/drain contact structure on the 2source/drain region, wherein the 2source/drain region is isolated from the 1source/drain region through an interlayer structure, and wherein a spacer is formed at an upper portion of a sidewall of the 2source/drain contact structure, between the 1source/drain contact structure and the 2source/drain contact structure.