Samsung electronics co., ltd. (20240162307). SEMICONDUCTOR DEVICES simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Bumsoo Kim of Hwaseong-si (KR)
Hyunseung Kim of Bucheon-si (KR)
Guangfan Jiao of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162307 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the patent application includes various patterns and dopants to improve its electrical characteristics. Here is a simplified explanation of the abstract:
- The device includes a substrate, interface insulation pattern, gate insulation pattern, threshold voltage controlling metal pattern, and conductive pattern.
- The gate insulation pattern has a higher dielectric constant oxide than silicon oxide.
- First dopants, including at least fluorine, are included in the gate insulation pattern and the interface insulation pattern.
- The device aims to have excellent electrical characteristics.
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the development of advanced electronic devices with improved electrical performance.
Problems Solved
This technology addresses the need for semiconductor devices with enhanced electrical characteristics, such as threshold voltage control and conductivity.
Benefits
The semiconductor device described in the patent application offers improved electrical characteristics, potentially leading to more efficient and reliable electronic devices.
Potential Commercial Applications
The technology could be utilized in the production of high-performance integrated circuits, sensors, and other electronic components.
Possible Prior Art
One possible prior art for this technology could be the use of different dopants and materials in semiconductor devices to enhance their electrical properties.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing semiconductor devices in terms of performance and efficiency.
What are the potential challenges or limitations in implementing this technology on a larger scale for commercial production?
The article does not address the potential challenges or limitations in implementing this technology on a larger scale for commercial production.
Original Abstract Submitted
a semiconductor device may include a substrate, an interface insulation pattern, a gate insulation pattern, a threshold voltage controlling metal pattern and a conductive pattern. the interface insulation pattern may be formed on the substrate. the gate insulation pattern including an oxide having a dielectric constant higher than that of silicon oxide may be formed on the interface insulation pattern. the threshold voltage controlling metal pattern may be formed on the gate insulation pattern. the conductive pattern may be formed on the threshold voltage controlling metal pattern. first dopants including at least fluorine may be included within and at at least one surface of the gate insulation pattern and at an upper surface of an interface insulation pattern contacting the gate insulation pattern. the semiconductor device may have excellent electrical characteristics.
