Samsung electronics co., ltd. (20240162278). CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING SAME simplified abstract
Contents
- 1 CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING SAME
Organization Name
Inventor(s)
JONGYEONG Min of SUWON-SI (KR)
CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162278 titled 'CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING SAME
Simplified Explanation
The capacitor structure described in the patent application consists of a lower electrode, a dielectric pattern made of a metal oxide with 4 valence electrons, an interface structure with a first interface pattern of a metal oxide doped with nitrogen, and a second interface pattern of a different metal oxide.
- Lower electrode
- Dielectric pattern made of a metal oxide with 4 valence electrons
- Interface structure with a first interface pattern of a metal oxide doped with nitrogen and a second interface pattern of a different metal oxide
- Upper electrode
Potential Applications
The technology described in this patent application could be applied in various electronic devices such as capacitors, memory devices, and sensors.
Problems Solved
This technology provides improved performance and reliability in electronic devices by enhancing the interface structure between the dielectric pattern and the upper electrode.
Benefits
- Enhanced performance and reliability of electronic devices - Improved interface structure for better functionality - Potential for increased efficiency in electronic components
Potential Commercial Applications
"Enhanced Interface Structure for Electronic Devices: Improving Performance and Reliability"
Possible Prior Art
There may be prior art related to capacitor structures with interface structures, but specific examples are not provided in the patent application.
Unanswered Questions
How does this technology compare to existing capacitor structures in terms of performance and reliability?
The patent application does not provide a direct comparison with existing capacitor structures, so it is unclear how this technology stacks up against current solutions.
What specific electronic devices could benefit the most from this technology?
While the potential applications are mentioned broadly, it would be helpful to know which specific electronic devices could see the most significant improvements from implementing this technology.
Original Abstract Submitted
a capacitor structure includes; a lower electrode, a dielectric pattern on the lower electrode, an interface structure on the dielectric pattern, and an upper electrode on the interface structure. the dielectric pattern includes an oxide of a metal having 4 valence electrons. the interface structure includes a first interface pattern including a first metal oxide doped with nitrogen, and a second interface including a second metal oxide.
