Samsung electronics co., ltd. (20240162228). THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
- 1 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240162228 titled 'THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The three-dimensional semiconductor device described in the abstract includes a lower connection structure, a device structure, and an upper connection structure arranged along a first direction. The device structure consists of a substrate on the lower connection structure, source/drain patterns, a separation pattern, and a through conductive pattern connecting the lower and upper connection structures.
- Lower connection structure, device structure, and upper connection structure are arranged sequentially along a first direction.
- Device structure includes a substrate, source/drain patterns, separation pattern, and through conductive pattern.
- Through conductive pattern connects lower and upper connection structures.
- Through conductive pattern is connected to either the first source/drain pattern or the second source/drain pattern.
Potential Applications
The technology described in this patent application could be applied in:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuit design
Problems Solved
This technology helps in:
- Improving connectivity in semiconductor devices
- Enhancing performance and reliability of electronic components
- Facilitating miniaturization of electronic devices
Benefits
The benefits of this technology include:
- Increased efficiency in semiconductor devices
- Enhanced signal transmission capabilities
- Improved overall functionality of electronic systems
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Consumer electronics
- Telecommunications industry
- Automotive sector
Possible Prior Art
One possible prior art related to this technology is the use of through-silicon vias (TSVs) in semiconductor devices to improve connectivity and performance.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of efficiency and performance?
This article does not provide a direct comparison with existing semiconductor device structures to evaluate the efficiency and performance improvements offered by the described technology.
What are the specific manufacturing processes involved in implementing this three-dimensional semiconductor device?
The article does not delve into the specific manufacturing processes required to implement this three-dimensional semiconductor device, leaving a gap in understanding the practical aspects of its production.
Original Abstract Submitted
a three-dimensional semiconductor device includes a lower connection structure; a device structure; and an upper connection structure sequentially disposed along a first direction, wherein the device structure includes a substrate on the lower connection structure; first and second source/drain patterns on the substrate; a separation pattern adjacent in a second direction to the source/drain patterns, the second direction being parallel to a bottom surface of the substrate; and a through conductive pattern adjacent in a third direction to the separation pattern, the third direction being parallel to the bottom surface of the substrate and intersecting the second direction, the through conductive pattern connects the lower connection structure and the upper connection structure to each other, and the through conductive pattern is connected either through the lower connection structure to the first source/drain pattern or through the upper connection structure to the second source/drain pattern.
