Samsung electronics co., ltd. (20240161860). SEMICONDUCTOR DEVICE AND RETENTION TEST METHOD simplified abstract

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SEMICONDUCTOR DEVICE AND RETENTION TEST METHOD

Organization Name

samsung electronics co., ltd.

Inventor(s)

MYEONGJIN Oh of SUWON-SI (KR)

KYUNGJIN Park of SUWON-SI (KR)

YONGSUK Choi of SUWON-SI (KR)

SEMICONDUCTOR DEVICE AND RETENTION TEST METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240161860 titled 'SEMICONDUCTOR DEVICE AND RETENTION TEST METHOD

Simplified Explanation

The semiconductor device described in the abstract includes a memory test circuit, a memory device, and a test logic. The memory test circuit generates a signal based on the logic levels of two other signals, which determines the activation of the memory device. The test logic performs a retention test on the memory device based on the logic level of one of the signals.

  • Memory test circuit outputs a signal based on logic levels of two other signals
  • Memory device activation determined by the signal from the memory test circuit
  • Test logic performs retention test on memory device based on logic level of one signal

Potential Applications

This technology could be applied in various memory testing applications, such as quality control in semiconductor manufacturing, ensuring data retention in memory devices, and optimizing memory performance in electronic devices.

Problems Solved

This innovation addresses the need for efficient memory testing processes, ensuring the reliability and functionality of memory devices. It helps in detecting and resolving issues related to data retention and memory performance.

Benefits

- Improved memory testing accuracy - Enhanced reliability of memory devices - Optimal memory performance in electronic systems

Potential Commercial Applications

"Memory Testing Technology for Enhanced Performance and Reliability"

Possible Prior Art

One possible prior art in this field could be the use of memory test circuits and test logics in semiconductor devices for memory testing purposes.

Unanswered Questions

How does this technology compare to existing memory testing methods?

This article does not provide a direct comparison with traditional memory testing methods, leaving the reader to wonder about the specific advantages and disadvantages of this new approach.

What are the specific parameters used in the retention test performed by the test logic?

The article does not delve into the details of the retention test parameters, leaving a gap in understanding the exact criteria used for testing memory device retention.


Original Abstract Submitted

a semiconductor device includes: a memory test circuit that outputs a fourth signal based on a logic level of a second signal corresponding to a first signal output by a host and a logic level of a third signal; a memory device that becomes active or inactive based on a logic level of the fourth signal; and a test logic that outputs the third signal and performs a retention test on the memory device based on the logic level of the second signal.